SPD15N65T1

SPD15N65T1 650V /15A Trench Field Stop IGBT Features  Max Junction Temperature 150°C  High breakdown voltage up to 650V for improved reliability  Short Circuit Rated  Very Low Saturation Voltage: VCE 650 V IC 15 A VCE(SAT) IC=15A 1.65 V VCE(SAT) = 1.65V (Typ.) @ IC = 15A  Soft current turn-off waveforms Applications  Soft switching applications  Air conditioning  Motor drive inverter Product SPD15N65T1 http://www.superic-tech.com Package TO-263 1 Packaging Tube 2019.01 / Rev2.3 SPD15N65T1 650V /15A Trench Field Stop IGBT Maximum Ratings （Tj= 25℃ unless otherwise specified） Parameter Symbol Value Unit Collector-Emitter Breakdown Voltage VCE 650 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC 30 15 A Diode Forward current, limited by Tjmax TC = 25°C TC = 100°C IF 30 15 A Continuous Gate-emitter voltage VGE ±20 V Transient Gate-emitter voltage VGE ±30 V - 60 A Pulsed collector current, VGE=15V, tp limited by Tjmax ICM 45 A Short Circuit Withstand Time, VGE= 15V, VCE≤ 400V Tsc 5 μs Power dissipation , Tj=25℃ Ptot 27 W Operating junction temperature Tj -40...+150 °C Storage temperature Ts -55...+150 °C - 260 °C Symbol Max. Value Unit Turn off safe operating area VCE ≤650V, Tj ≤ 150°C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s Thermal Resistance Parameter IGBT thermal resistance, junction - case Rθ(j-c) 4.9 K/W Diode thermal resistance, junction - case Rθ(j-c) 5.8 K/W Thermal resistance, junction - ambient Rθ(j-a) 62.5 K/W http://www.superic-tech.com 2 2019.01 / Rev2.3 SPD15N65T1 650V /15A Trench Field Stop IGBT Electrical Characteristics of the IGBT（Tj= 25℃ unless otherwise specified） Symbol Parameter Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 1mA 650 - - V Static Characteristics (Tested on wafers) BVCES Collector to Emitter Breakdown Voltage Collector to Emitter Saturation Voltage G-E Threshold Voltage IC = 15A, VGE = 15V - 1.65 1.95 V VGE = VCE, IC = 250μA 4.1 5.0 5.7 V ICES Collector Cut-Off Current VCE = 650V, VGE = 0V - - 10 μA IGES G-E Leakage Current VGE = ±20V, VCE = 0V - - ±200 nA 10 - S Unit VCE(SAT) VGE(th) gfs VCE=20V, IC=15A Transconductance Parameter Symbol Conditions - Min Typ Max - 1910 - - 80 - - 46 - VCC = 480V, IC = 15A, VGE = 15V - 92 - nC VGE=15V,tSC≤5us VCC=400V, Tj，start=25°C - 98 - A Dynamic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current IC（SC） http://www.superic-tech.com VCE = 25V, VGE = 0V, f = 1MHz 3 pF 2019.01 / Rev2.3 SPD15N65T1 650V /15A Trench Field Stop IGBT Switching Characteristic, Inductive Load（Tj= 25℃ unless otherwise specified） Parameter Symbol Conditions Min. Typ. Max. Unit Dynamic Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time td(on) - 15 - ns tr - 25 - ns - 60 - ns - 46 - ns td(off) tf Tj=25C VCC = 400V, IC = 15A, VGE = 0/15V, Rg=12Ω Turn-on Energy Eon - 0.75 - mJ Turn-off Energy Eoff - 0.1 - mJ Electrical Characteristics of the DIODE（Tj= 25℃ unless otherwise specified） Parameter Symbol Conditions Min Typ Max Unit - 1.7 - V - 50 - ns - 4 - A - 83 - nC Dynamic Diode Forward Voltage VFM Reverse Recovery Time Trr Reverse Recovery Current Irr Reverse Recovery Charge Qrr http://www.superic-tech.com IF = 15A IF= 15A VR = 300V, di/dt =200A/μs 4 2019.01 / Rev2.3 SPD15N65T1 650V /15A Trench Field Stop IGBT Fig. 1 FBSOA characteristics Fig. 2 Load Current vs. Frequency 100 40 35 30 80℃ tP = 10μs 10 50μs 25 100μs IC(A) 500μs IC(A) 1ms DC 100℃ 20 15 1 10 rectangular current shape, D=0.5, VCE=400V, VGE=0/15V, Rg=12Ω，Tj ≤150C 5 Ta=25°C, Tj ≤150C , VGE=15V 0 0.1 1 10 100 1 1000 VCE(V) 10 100 f (KHz) Fig. 3 Output characteristics Fig. 4 Saturation voltage characteristics 50 60 25℃ VGE = 20V 17V 150℃ 15V 50 40 13V 11V 40 IC(A) IC(A) 30 30 20 20 10 10 VGE = 15V 0 0 0 1 2 3 4 5 6 7 8 0 VCE(V) http://www.superic-tech.com 1 2 3 4 5 VCE(V) 5 2019.01 / Rev2.3 SPD15N65T1 650V /15A Trench Field Stop IGBT Fig. 5 Switching times vs. gate resistor Fig. 6 Switching times vs. collector current 1000 td(off) td(off) tf tf td(on) td(on) tr tr 100 t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] 1000 10 100 10 Common Emitter VCC = 400V, VGE = 15V, IC=15A Ta=25℃ Common Emitter VCC = 400V, VGE = 15V, RG=12Ω Ta=25℃ 1 1 0 10 20 30 40 50 60 70 80 90 0 10 20 Rg(Ω) 30 40 50 IC(A) Fig. 7 Switching loss vs. gate resistor Fig. 8 Switching loss vs. collector current 0.9 3 Eoff Eon Eoff Eon 0.8 2.5 0.6 Switching loss (mJ) Switching loss (mJ) 0.7 0.5 0.4 0.3 2 1.5 Common Emitter VCC = 400V, VGE = 15V, RG=12Ω Ta=25℃ 1 0.2 0.5 Common Emitter VCC = 400V, VGE = 15V, IC=15A Ta=25℃ 0.1 0 0 0 10 20 30 40 50 60 70 80 0 90 20 30 40 50 Ic (A) Rg (Ω) http://www.superic-tech.com 10 6 2019.01 / Rev2.3 SPD15N65T1 650V /15A Trench Field Stop IGBT Fig. 9 Gate charge characteristics Fig. 10 Capacitance characteristics 15 10000 Ciss(pF) 240V Coss(pF) Crss(pF) 480V 12 Capacitance 1000 VGE (V) 9 6 100 3 Common Emitter IC= 15A ,Ta=25℃ Common Emitter VGE = 0V, f = 1MHz Ta=25℃ 0 0 20 40 60 0 10 20 30 VCE(V) Qg (nC) http://www.superic-tech.com 10 7 2019.01 / Rev2.3