SPT20N120F1

SPT20N120F1 1200V /20A Trench Field Stop IGBT FEATURES  High breakdown voltage to 1200V for VCE 1200 V IC 20 A VCE(SAT) IC=20A 1.9 V improved reliability  Trench-Stop Technology offering :  very tight parameter distribution  high ruggedness, temperature stable behavior  Short circuit withstand time – 10s  High ruggedness, temperature stable  Low VCE(SAT)  Easy parallel switching capability due to positive temperature coefficient in VCE(SAT)  Enhanced avalanche capability  Soft current turn-off waveforms APPLICATION  Inductive cooking  Inverterized microwave ovens  Resonant converters  Soft switching application Product SPT20N120F1 Package TO247 Packaging Tube http://www.superic-tech.com 1 2018.11 / Rev3.0 SPT20N120F1 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Breakdown Voltage VCE 1200 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC 40 20 A Diode Forward current, limited by Tjmax TC = 25°C TC = 100°C IF 40 20 A Pulsed collector current, tp limited by Tjmax ICpuls 60 A Turn off safe operating area VCE ≤1200V, Tj ≤ 150°C - 60 A Short Circuit Withstand Time, VGE= 15V, VCE≤ 600V Tsc 10 μs Power dissipation , Tj=25℃ Ptot 208 W Operating junction temperature Tj - -40...+150 °C Storage temperature Ts -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s - 260 °C Thermal Resistance Parameter Symbol Max. Value IGBT thermal resistance, junction - case Rθ(j-c) 0.64 K/W Diode thermal resistance, junction - case Rθ(j-c) 1.5 K/W Thermal resistance, junction - ambient Rθ(j-a) 40 K/W http://www.superic-tech.com 2 Unit 2018.11 / Rev3.0 SPT20N120F1 Electrical Characteristics of the IGBT（Tj= 25℃ unless otherwise specified）： Parameter Symbol Conditions Min Typ Max Unit Static Collector-Emitter breakdown voltage BVCES VGE=0V , IC=250μA 1200 - - V Gate threshold voltage VGE(th) VGE=VCE, IC=250μA 5.2 6.0 6.8 V Collector-Emitter Saturation voltage VCE(sat) VGE=15V, IC=20A Tj = 25°C Tj = 150°C - 1.9 2.4 2.3 - V Zero gate voltage collector current ICES VCE = 1200V, VGE = 0V Tj = 25°C Tj = 150°C - - 100 1000 μA - Gate-emitter leakage current IGES VCE = 0V, VGE = 20V - - 100 nA Transconductance gfs VCE=20V, IC=20A - 13 - S Parameter Symbol Conditions Min Typ Max Unit - 1870 - - 72 - - 48 - VCC = 960V, IC = 20A, VGE = 15V - 140 - nC VGE=15V,tSC≤10us VCC=600V, Tj，start=25°C - 140 - A Dynamic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current IC（SC） http://www.superic-tech.com VCE = 25V, VGE = 0V, f = 1MHz 3 2018.11 / Rev3.0 pF SPT20N120F1 Switching Characteristic, Inductive Load Parameter Symbol Conditions Min Typ Max Unit Dynamic , at Tj = 25°C Turn-on delay time td(on) Rise time - tr Turn-on energy Turn-off delay time - VCC = 600V, IC = 20A, VGE = 0/15V, Rg=42Ω Eon td(off) Fall time - Eoff Electrical Characteristics of the DIODE（Tj= 25℃ Parameter - tf Turn-off energy - Symbol Conditions 60 - ns - 22 ns - 2.5 mJ - 300 ns - 180 ns - 0.43 mJ unless otherwise specified） Min Typ Max Unit - 2.9 - V - 270 - ns - 10 - A - 1800 - nC Dynamic Diode Forward Voltage VFM Reverse Recovery Time Trr Reverse Recovery Current Irr Reverse Recovery Charge Qrr http://www.superic-tech.com IF = 20A IF= 15A, di/dt= 600A/μs 4 2018.11 / Rev3.0 SPT20N120F1 Fig. 1 FBSOA characteristics Fig. 2 Load Current vs. Frequency 60 100 50 80℃ tP = 10μs 40 10 50μs 110℃ IC(A) IC(A) 100μs 500μs 30 1ms DC 20 1 10 D=0.5, VCE=600V, VGE=0/15V, Rg=42Ω，Tj ≤ 150C Ta=25°C, Tj ≤150C , VGE=15V 0 0.1 1 10 100 0.1 1000 1 10 VCE(V) 100 f (KHz) Fig. 3 Output characteristics Fig. 4 Saturation voltage characteristics 60 60 25℃ VGE = 20V 50 50 150℃ 17V 15V 40 40 IC(A) IC(A) 13V 11V 30 30 9V 20 20 10 10 0 0 VGE = 15V 0 1 2 3 4 5 0 VCE(V) http://www.superic-tech.com 1 2 3 4 5 VCE(V) 5 2018.11 / Rev3.0 6 SPT20N120F1 Fig. 5 Switching times vs. gate resistor Fig. 6 Switching times vs. collector current 1000 td(off) td(off) tf tf td(on) td(on) tr tr t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] 1000 100 100 Common Emitter VCC = 600V, VGE = 15V, RG=42Ω Ta=25℃ Common Emitter VCC =600V, VGE = 15V, IC=20A Ta=25℃ 10 10 0 5 0 10 15 20 25 30 35 40 45 50 55 10 20 40 50 60 IC(A) Rg (Ω) Fig. 7 Switching loss vs. gate resistor Fig. 8 Switching loss vs. collector current 3 12 Eoff Eon Eoff Eon 2.5 10 2 8 Switching loss (mJ) Switching loss (mJ) 30 1.5 1 6 4 Common Emitter VCC =600V, VGE = 15V, IC=20A Ta=25℃ 0.5 Common Emitter VCC = 600V, VGE = 15V, RG=42Ω Ta=25℃ 2 0 0 0 5 10 15 20 25 30 35 40 45 50 55 0 Rg (Ω) http://www.superic-tech.com 10 20 30 40 50 Ic (A) 6 2018.11 / Rev3.0 60 SPT20N120F1 Fig. 9 Gate charge characteristics Fig. 10 Capacitance characteristics 15 10000 240V Ciss(pF) 640V Coss(pF) Crss(pF) 960V 12 Capacitance 1000 VGE (V) 9 6 100 3 Common Emitter VGE = 0V, f = 1MHz Ta=25℃ Common Emitter IC= 20A ,Ta=25℃ 0 10 0 50 100 150 Qg (nC) http://www.superic-tech.com 1 11 21 VCE(V) 7 2018.11 / Rev3.0 31 SPT20N120F1 http://www.superic-tech.com 8 2018.11 / Rev3.0