SPT25N120F1A1

SPT25N120F1A1 1200V /25A Trench Field Stop IGBT  High breakdown voltage to 1200V for VCE 1200 V IC 25 A VCE(SAT) IC=25A 2.0 V improved reliability  Trench-Stop Technology offering :  High speed switching  High ruggedness, temperature stable  Low VCEsat  Easy parallel switching capability due to positive temperature coefficient in VCEsat  Enhanced avalanche capability APPLICATION  Uninterruptible Power Supplies  Solar inverter  Welding  PFC applications http://www.superic-tech.com 1 2017.06 / Rev3.0 SPT25N120F1A1 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Breakdown Voltage VCE 1200 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC 50 25 A Diode Forward current, limited by Tjmax TC = 25°C TC = 100°C IF 50 25 A Turn off safe operating area VCE ≤1350V, Tj ≤ 150°C - 50 A Operating junction temperature Tj - -40...+150 °C Storage temperature Ts -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s - 260 °C Thermal Resistance Symbol Max. Value IGBT thermal resistance, junction - case Rθ(j-c) 0.48 K/W Diode thermal resistance, junction - case Rθ(j-c) 1.2 K/W Thermal resistance, junction - ambient Rθ(j-a) 40 K/W Parameter http://www.superic-tech.com 2 Unit 2017.06 / Rev3.0 SPT25N120F1A1 Electrical Characteristics of the IGBT（Tj= 25℃ Parameter Symbol unless otherwise specified）： Conditions Min. Typ. Max. Unit 1200 - - V 5.1 5.8 6.4 V Static Collector-Emitter breakdown voltage BVCES VGE=0V , IC=1mA Gate threshold voltage VGE(th) VGE=VCE, IC=250μA Collector-Emitter Saturation voltage VCE(sat) VGE=15V, IC=25A Tj = 25°C Tj = 150°C - 2.0 2.5 2.5 - V Zero gate voltage collector current ICES VCE = 1350V, VGE = 0V Tj = 25°C Tj = 150°C -