SPT25N120T1

SPT25N120T1 1200V /25A Trench Field Stop IGBT FEATURES  High breakdown voltage to 1200V for VCE 1200 V IC 25 A VCE(SAT) IC=25A 1.65 V improved reliability  Trench-Stop Technology offering :  Very tight parameter distribution  High ruggedness, temperature stable behavior  Short circuit withstand time – 10s  Low VCE(SAT)  Easy parallel switching capability due to positive temperature coefficient in VCE(SAT)  Enhanced avalanche capability APPLICATION  Frequency Converters  Motor Drive Product SPT25N120T1 http://www.superic-tech.com Package TO247 1 Packaging Tube 2019.04 / Rev3.2 SPT25N120T1 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Breakdown Voltage VCE 1200 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC 50 25 A Diode Forward current, limited by Tjmax TC = 25°C TC = 100°C IF 50 25 A Continuous Gate-emitter voltage VGE ±20 V Transient Gate-emitter voltage VGE ±30 V - 100 A Pulsed collector current, VGE= 15V, tp limited by Tjmax ICM 100 A Short Circuit Withstand Time, VGE= 15V, VCE≤ 600V Tsc 10 μs Power dissipation , Tj=25℃ Ptot 250 W Operating junction temperature Tj -40...+150 °C Storage temperature Ts -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s - 260 °C Turn off safe operating area VCE ≤1200V, Tj ≤ 150°C Thermal Resistance Parameter Symbol Max. Value IGBT thermal resistance, junction - case Rθ(j-c) 0.5 K/W Diode thermal resistance, junction - case Rθ(j-c) 1 K/W Thermal resistance, junction - ambient Rθ(j-a) 40 K/W http://www.superic-tech.com 2 Unit 2019.04 / Rev3.2 SPT25N120T1 Electrical Characteristics of the IGBT（Tj= 25℃ unless otherwise specified）： Parameter Symbol Conditions Min Typ Max Unit Static Collector-Emitter breakdown voltage BVCES VGE=0V , IC=250μA 1200 - - V Gate threshold voltage VGE(th) VGE=VCE, IC=250μA 5.2 6.0 6.8 V Collector-Emitter Saturation voltage VCE(sat) VGE=15V, IC=25A Tj = 25°C Tj = 150°C - 1.65 2.0 2.05 - V Zero gate voltage collector current ICES VCE = 1200V, VGE = 0V Tj = 25°C Tj = 150°C - - 100 1000 μA - Gate-emitter leakage current IGES VCE = 0V, VGE = ±20V - - 100 nA Transconductance gfs VCE=20V, IC=20A - 20 - S Parameter Symbol Conditions Min Typ Max Unit - 2340 - - 105 - - 60 - VCC = 960V, IC = 25A, VGE = 15V - 135 - nC VGE=15V,tSC≤10us VCC=600V, Tj，start=25°C - 210 - A Dynamic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current IC（SC） http://www.superic-tech.com VCE = 25V, VGE = 0V, f = 1MHz 3 2019.04 / Rev3.2 pF SPT25N120T1 Switching Characteristic, Inductive Load Parameter Symbol Conditions Min Typ Max Unit Dynamic , at Tj = 25°C Turn-on delay time td(on) - 45 - ns tr - 21 - ns - 2.2 - mJ - 200 - ns tf - 93 - ns Eoff - 0.75 - mJ Rise time Turn-on energy Turn-off delay time VCC = 600V, IC = 25A, VGE = 0/15V, Rg=12Ω Eon td(off) Fall time Turn-off energy Electrical Characteristics of the DIODE（Tj= 25℃ Parameter Symbol Conditions unless otherwise specified） Min Typ Max Unit - 3.0 - V - 180 - ns - 5 - A - 270 - nC Dynamic Diode Forward Voltage VFM Reverse Recovery Time Trr Reverse Recovery Current Irr Reverse Recovery Charge Qrr http://www.superic-tech.com IF = 25A IF= 25A, di/dt= 200A/μs 4 2019.04 / Rev3.2 SPT25N120T1 Fig. 1 FBSOA characteristics Fig. 2 Load Current vs. Frequency 100 100 90 80 80℃ 70 tP = 10μs 50μs 10 60 100μs IC(A) IC(A) 500μs 1ms DC 110℃ 50 40 1 30 20 10 D=0.5, VCE=600V, VGE=0/15V, Rg=12Ω，Tj ≤ 150C Ta=25°C, Tj ≤150C , VGE=15V 0 0 1 10 100 1 1000 10 Fig. 3 Output characteristics Fig. 4 Saturation voltage characteristics 120 100 110 25℃ 90 VGE = 20V 100 90 150℃ 80 17V 15V 13V 80 70 11V 9V 7V 60 IC(A) 70 IC(A) 100 f (KHz) VCE(V) 60 50 50 40 40 30 30 20 20 10 10 0 VGE = 15V 0 0 1 2 3 4 5 0 http://www.superic-tech.com 1 2 3 4 5 VCE(V) VCE(V) 5 2019.04 / Rev3.2 6 SPT25N120T1 Fig. 5 Switching times vs. gate resistor Fig. 6 Switching times vs. collector current 1000 1000 td(off) tf td(on) tr t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] td(off) tf td(on) tr 100 100 Common Emitter VCC = 600V, VGE = 15V, RG=12Ω Ta=25℃ Common Emitter VCC =600V, VGE = 15V, IC=25A Ta=25℃ 10 10 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 10 20 30 40 60 70 80 90 IC(A) Rg (Ω) Fig. 7 Switching loss vs. gate resistor Fig. 8 Switching loss vs. collector current 3.5 16 Eon Eoff Eon Eoff 14 3 12 Switching loss (mJ) 2.5 Switching loss (mJ) 50 2 1.5 10 Common Emitter VCC = 600V, VGE = 15V, RG=12Ω Ta=25℃ 8 6 1 4 0.5 Common Emitter VCC =600V, VGE = 15V, IC=25A Ta=25℃ 2 0 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 0 Rg (Ω) http://www.superic-tech.com 10 20 30 40 50 60 70 80 90 Ic (A) 6 2019.04 / Rev3.2 SPT25N120T1 Fig. 9 Gate charge characteristics Fig. 10 Capacitance characteristics 10000 15 240V 640V 960V 12 Ciss(pF) Coss(pF) 1000 Crss(pF) Capacitance VGE (V) 9 6 100 3 Common Emitter VGE = 0V, f = 1MHz Ta=25℃ Common Emitter IC= 25A ,Ta=25℃ 0 10 0 50 100 150 200 0 Qg (nC) http://www.superic-tech.com 7 10 VCE(V) 20 2019.04 / Rev3.2 30 SPT25N120T1 http://www.superic-tech.com 8 2019.04 / Rev3.2