SPT25N120U1

SPT25N120U1 1200V /25A Trench Field Stop IGBT FEATURES  High breakdown voltage to 1200V for VCE 1200 V IC 25 A VCE(SAT) IC=25A 2.05 V improved reliability  Trench-Stop Technology offering :  High speed switching  High ruggedness, temperature stable  Short circuit withstand time – 10s  Low VCEsat  Easy parallel switching capability due to positive temperature coefficient in VCEsat  Enhanced avalanche capability APPLICATION  Uninterruptible Power Supplies  Solar inverter  Welding  PFC applications Product SPT25N120U1 http://www.superic-tech.com Package TO247 1 Packaging Tube 2019.01 / Rev3.2 SPT25N120U1 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Breakdown Voltage VCE 1200 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC 50 25 A Diode Forward current, limited by Tjmax TC = 25°C TC = 100°C IF 50 25 A Continuous Gate-emitter voltage VGE ±20 V Transient Gate-emitter voltage VGE ±30 V - 75 A Pulsed collector current, VGE= 15V , tp limited by Tjmax ICM 75 A Short Circuit Withstand Time, VGE= 15V, VCE≤ 600V Tsc 10 μs Power dissipation , Tj=25℃ Ptot 210 W Operating junction temperature Tj -40...+150 °C Storage temperature Ts -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s - 260 °C Turn off safe operating area VCE ≤1200V, Tj ≤ 150°C Thermal Resistance Parameter Symbol Max. Value IGBT thermal resistance, junction - case Rθ(j-c) 0.61 K/W Diode thermal resistance, junction - case Rθ(j-c) 1.2 K/W http://www.superic-tech.com 2 Unit 2019.01 / Rev3.2 SPT25N120U1 Thermal resistance, junction - ambient Rθ(j-a) 40 K/W Electrical Characteristics of the IGBT（Tj= 25℃ unless otherwise specified）： Parameter Symbol Conditions Min Typ Max Unit Static Collector-Emitter breakdown voltage BVCES VGE=0V , IC=250μA 1200 - - V Gate threshold voltage VGE(th) VGE=VCE, IC=250μA 5.4 6.0 6.6 V Collector-Emitter Saturation voltage VCE(sat) VGE=15V, IC=25A Tj = 25°C Tj = 150°C - 2.05 2.65 2.45 - V VCE = 1200V, VGE = 0V Tj = 25°C Tj = 150°C - - 100 1000 μA - 100 nA - S Zero gate voltage collector current ICES Gate-emitter leakage current IGES VCE = 0V, VGE = ±20V - - Transconductance gfs VCE=20V, IC=25A - 13 Parameter Symbol Conditions Min Typ Max Unit - 1865 - - 70 - - 45 - VCC = 960V, IC = 25A, VGE = 15V - 137 - nC VGE=15V,tSC≤10us VCC=600V, Tj，start=25°C - 140 - A Dynamic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current IC（SC） http://www.superic-tech.com VCE = 25V, VGE = 0V, f = 1MHz 3 2019.01 / Rev3.2 pF SPT25N120U1 Switching Characteristic, Inductive Load Parameter Symbol Conditions Min Typ Max Unit Dynamic , at Tj = 25°C Turn-on delay time td(on) Rise time - tr Turn-on energy Turn-off delay time - Eon VCC = 600V, IC = 25A, VGE = 0/15V, Rg=42Ω td(off) Fall time - tf Turn-off energy - Eoff 62 22 3.3 297 94 - ns - ns - mJ - ns - ns - - 0.65 mJ Min. Typ. Max. Unit - 3.1 - V - 420 - nS - 17 - A - 2570 - nC Electrical Characteristics of the DIODE Parameter Symbol Conditions Dynamic , at Tj = 25°C Diode Forward Voltage VFM Reverse Recovery Time Trr Reverse Recovery Current Irr Reverse Recovery Charge Qrr http://www.superic-tech.com IF = 25A IF= 25A, di/dt= 600A/μs 4 2019.01 / Rev3.2 SPT25N120U1 Fig. 1 FBSOA characteristics Fig. 2 Load Current vs. Frequency 60 100 50 80℃ tP = 10μs 40 10 50μs 110℃ IC(A) IC(A) 100μs 500μs 30 1ms DC 1 20 10 D=0.5, VCE=600V, VGE=0/15V, Rg=42Ω，Tj ≤ 150C Ta=25°C, Tj ≤150C , VGE=15V 0 0.1 1 10 100 0.1 1000 1 10 VCE(V) 100 f (KHz) Fig. 3 Output characteristics Fig. 4 Saturation voltage characteristics 60 60 25℃ VGE = 20V 50 50 17V 150℃ 15V 13V 40 40 11V IC(A) IC(A) 9V 30 30 20 20 10 10 0 0 VGE = 15V 0 1 2 3 4 5 0 VCE(V) http://www.superic-tech.com 1 2 3 4 5 VCE(V) 5 2019.01 / Rev3.2 6 SPT25N120U1 Fig. 5 Switching times vs. gate resistor Fig. 6 Switching times vs. collector current 1000 td(off) td(off) tf tf td(on) td(on) tr tr t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] 1000 100 100 Common Emitter VCC = 600V, VGE = 15V, RG=42Ω Ta=25℃ Common Emitter VCC =600V, VGE = 15V, IC=25A Ta=25℃ 10 10 0 5 0 10 15 20 25 30 35 40 45 50 55 10 20 30 40 50 60 IC(A) Rg (Ω) Fig. 7 Switching loss vs. gate resistor Fig. 8 Switching loss vs. collector current 4 12 Eoff Eon Eoff Eon 3.5 10 8 Switching loss (mJ) Switching loss (mJ) 3 2.5 2 1.5 4 Common Emitter VCC =600V, VGE = 15V, IC=25A Ta=25℃ 1 6 Common Emitter VCC = 600V, VGE = 15V, RG=42Ω Ta=25℃ 2 0.5 0 0 0 5 10 15 20 25 30 35 40 45 50 55 0 Rg (Ω) http://www.superic-tech.com 10 20 30 40 50 Ic (A) 6 2019.01 / Rev3.2 60 SPT25N120U1 Fig. 9 Gate charge characteristics Fig. 10 Capacitance characteristics 15 10000 Ciss(pF) Coss(pF) Crss(pF) 12 1000 Capacitance VGE (V) 9 240V 640V 6 960V 100 3 Common Emitter VGE = 0V, f = 1MHz Ta=25℃ Common Emitter IC= 25A ,Ta=25℃ 0 10 0 50 100 150 Qg (nC) http://www.superic-tech.com 1 11 21 VCE(V) 7 2019.01 / Rev3.2 31 SPT25N120U1 http://www.superic-tech.com 8 2019.01 / Rev3.2