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SPT25N135F1A

SPT25N135F1A

  • 厂商:

    SPTECH(质超)

  • 封装:

    TO-247-3

  • 描述:

    1200V/40A沟槽场阻IGBT

  • 数据手册
  • 价格&库存
SPT25N135F1A 数据手册
SPT25N135F1A 1350V /25A Trench Field Stop IGBT Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as inductive heating, VCE 1350 V IC 25 A VCE(SAT) IC=25A 2.0 V microwave oven, etc. FEATURES  High breakdown voltage to 1350V for improved reliability  Trench-Stop Technology offering :  High speed switching  High ruggedness, temperature stable  Low VCEsat  Easy parallel switching capability due to positive temperature coefficient in VCEsat  Soft current turn-off waveforms  Enhanced avalanche capability APPLICATION  Inductive cooking  Inverterized microwave ovens  Resonant converters  Soft switching applications http://www.superic-tech.com 1 2018.05 / Rev3.2 SPT25N135F1A Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Breakdown Voltage VCE 1350 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC 50 25 A Diode Forward current, limited by Tjmax TC = 25°C TC = 100°C IF 50 25 A Pulsed collector current, tp limited by Tjmax ICpuls 75 A Turn off safe operating area VCE ≤1350V, Tj ≤ 150°C - 75 A Operating junction temperature Tj - -40...+150 °C Storage temperature Ts -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s - 260 °C Thermal Resistance Parameter Symbol Max. Value IGBT thermal resistance, junction - case Rθ(j-c) 0.48 K/W Diode thermal resistance, junction - case Rθ(j-c) 1.2 K/W Thermal resistance, junction - ambient Rθ(j-a) 40 K/W http://www.superic-tech.com 2 Unit 2018.05 / Rev3.2 SPT25N135F1A Electrical Characteristics of the IGBT(Tj= 25℃ unless otherwise specified): Parameter Symbol Conditions Min Typ Max Unit VGE=0V , IC=1mA 1350 1450 - V VGE=0V , IC=10mA 1350 1450 - V 5.1 5.8 6.4 V Static Collector-Emitter breakdown voltage BVCES Gate threshold voltage VGE(th) VGE=VCE, IC=250μA Collector-Emitter Saturation voltage VCE(sat) VGE=15V, IC=25A Tj = 25°C Tj = 150°C - 2.0 2.5 2.5 - V Zero gate voltage collector current ICES VCE = 1350V, VGE = 0V Tj = 25°C Tj = 150°C -
SPT25N135F1A 价格&库存

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SPT25N135F1A
  •  国内价格
  • 1+15.33870
  • 10+13.27644
  • 30+11.62458
  • 100+10.30104
  • 500+9.70596
  • 1000+9.44946

库存:38

SPT25N135F1A
    •  国内价格
    • 1+5.59000
    • 10+5.16000
    • 30+5.07400

    库存:0