SPT25N135F1A
1350V /25A Trench Field Stop IGBT
Field
Stop
Trench
IGBTs
offer
low
switching losses, high energy efficiency and
high avalanche ruggedness for soft switching
applications
such
as
inductive
heating,
VCE
1350
V
IC
25
A
VCE(SAT) IC=25A
2.0
V
microwave oven, etc.
FEATURES
High breakdown voltage to 1350V for
improved reliability
Trench-Stop Technology offering :
High speed switching
High ruggedness, temperature stable
Low VCEsat
Easy parallel switching capability due
to positive temperature coefficient in
VCEsat
Soft current turn-off waveforms
Enhanced avalanche capability
APPLICATION
Inductive cooking
Inverterized microwave ovens
Resonant converters
Soft switching applications
http://www.superic-tech.com
1
2018.05 / Rev3.2
SPT25N135F1A
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Breakdown Voltage
VCE
1350
V
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
IC
50
25
A
Diode Forward current, limited by Tjmax
TC = 25°C
TC = 100°C
IF
50
25
A
Pulsed collector current, tp limited by Tjmax
ICpuls
75
A
Turn off safe operating area VCE ≤1350V,
Tj ≤ 150°C
-
75
A
Operating junction temperature Tj
-
-40...+150
°C
Storage temperature
Ts
-55...+150
°C
Soldering temperature, wave soldering 1.6mm
(0.063in.) from case for 10s
-
260
°C
Thermal Resistance
Parameter
Symbol
Max. Value
IGBT thermal resistance,
junction - case
Rθ(j-c)
0.48
K/W
Diode thermal resistance,
junction - case
Rθ(j-c)
1.2
K/W
Thermal resistance,
junction - ambient
Rθ(j-a)
40
K/W
http://www.superic-tech.com
2
Unit
2018.05 / Rev3.2
SPT25N135F1A
Electrical Characteristics of the IGBT(Tj= 25℃ unless otherwise specified):
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VGE=0V , IC=1mA
1350
1450
-
V
VGE=0V , IC=10mA
1350
1450
-
V
5.1
5.8
6.4
V
Static
Collector-Emitter
breakdown voltage
BVCES
Gate threshold voltage
VGE(th)
VGE=VCE, IC=250μA
Collector-Emitter
Saturation voltage
VCE(sat)
VGE=15V, IC=25A
Tj = 25°C
Tj = 150°C
-
2.0
2.5
2.5
-
V
Zero gate voltage
collector current
ICES
VCE = 1350V, VGE = 0V
Tj = 25°C
Tj = 150°C
-
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