SPT40N120F1A

SPT40N120F1A 1200V /40A Trench Field Stop IGBT FEATURES  High breakdown voltage to 1200V for VCE 1200 V IC 40 A VCE(SAT) IC=40A 2.0 V improved reliability  Trench-Stop Technology offering :  High speed switching  High ruggedness, temperature stable  Short circuit withstand time – 10s  Low VCEsat  Easy parallel switching capability due to positive temperature coefficient in VCEsat  Enhanced avalanche capability APPLICATION  Uninterruptible Power Supplies  Solar inverter  Welding  PFC applications http://www.superic-tech.com 1 2018.06 / Rev3.3 SPT40N120F1A Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Breakdown Voltage VCE 1200 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC 80 40 A Diode Forward current, limited by Tjmax TC = 25°C TC = 100°C IF 80 40 A Pulsed Collector Current, limited by Tjmax ICpuls 160 A Turn off safe operating area VCE ≤1200V, Tj ≤ 150°C - 160 A Diode Pulsed Current, limited by Tjmax IFpuls 160 A Short Circuit Withstand Time, VGE= 15V, VCE≤ 600V Tsc 10 μs Power dissipation , Tj=25℃ Ptot 417 W Operating junction temperature Tj -40...+150 °C Storage temperature Ts -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s - 260 °C Thermal Resistance Parameter Symbol Max. Value Unit IGBT thermal resistance, junction - case Rθ(j-c) 0.3 K/W Diode thermal resistance, junction - case Rθ(j-c) 0.6 K/W Thermal resistance, junction - ambient Rθ(j-a) 40 K/W http://www.superic-tech.com 2 2018.06 / Rev3.3 SPT40N120F1A Electrical Characteristics of the IGBT（Tj= 25℃ unless otherwise specified）： Parameter Symbol Conditions Min. Typ. Max. Unit Static Collector-Emitter breakdown voltage BVCES VGE=0V , IC=250μA 1200 1300 - V Gate threshold voltage VGE(th) VGE=VCE, IC=250μA 5.1 5.8 6.4 V Collector-Emitter Saturation voltage VCE(sat) VGE=15V, IC=40A Tj = 25°C Tj = 150°C - 2.0 2.5 2.5 - V Zero gate voltage collector current ICES VCE = 1200V, VGE = 0V Tj = 25°C Tj = 150°C - - 10 2500 μA Gate-emitter leakage current IGES VCE = 0V, VGE = 20V - - 100 nA Transconductance gfs VCE=20V, IC=15A - 15 - S Parameter Symbol Conditions Min. Typ. Max. Unit Dynamic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current IC（SC） http://www.superic-tech.com - 4400 - - 180 - - 100 - VCC = 960V, IC = 40A, VGE = 15V - 270 - nC VGE=15V,tSC≤10us VCC=600V, Tj，start=25°C - 240 - A VCE = 25V, VGE = 0V, f = 1MHz 3 2018.06 / Rev3.3 pF SPT40N120F1A Switching Characteristic, Inductive Load Parameter Symbol Conditions Min. Typ. Max. Unit Dynamic , at Tj = 25°C Turn-on delay time td(on) - 60 - ns tr - 27 - ns - 2.9 - mJ - 230 - ns tf - 110 - ns Eoff - 0.8 - mJ Rise time Turn-on energy Turn-off delay time VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12Ω Eon td(off) Fall time Turn-off energy Electrical Characteristics of the DIODE（Tj= 25℃ unless otherwise specified） Parameter Symbol Conditions Min. Typ. Max. Unit Dynamic Diode Forward Voltage VFM Reverse Recovery Time Trr Reverse Recovery Current Irr Reverse Recovery Charge Qrr http://www.superic-tech.com IF = 40A IF= 40A, VR = 600V, di/dt= 400A/μs, 4 - 3.5 - V - 190 - ns - 6 - A - 530 - nC 2018.06 / Rev3.3 SPT40N120F1A Fig. 1 FBSOA characteristics Fig. 2 Load Current vs. Frequency 160 140 100 120 tP = 10μs 100 IC(A) IC(A) 50μs 10 100μs 80 80℃ 500μs 1ms 60 DC 1 110℃ 40 20 D=0.5, VCE=600V, VGE=0/15V, Rg=12Ω，Tj ≤150℃ Ta=25℃, Tj ≤150℃ , VGE=15V 0.1 0 1 10 100 1000 1 10 100 f (KHz) VCE(V) Fig. 3 Power dissipation as a function of TC Fig. 4 Short circuit time and current vs.VGE 450 260 400 240 350 220 300 200 250 180 TSC(us) 70 Isc Tsc ISC (A) Ptot(W) 60 200 50 40 160 150 140 100 120 50 100 30 20 0 80 25 50 75 100 125 150 TC(℃) http://www.superic-tech.com 10 9 10 11 12 13 14 15 16 VGE(V) 5 2018.06 / Rev3.3 SPT40N120F1A Fig. 5 Output characteristics Fig. 6 Saturation voltage characteristics 90 90 VGE = 20V 80 80 150℃ 17V 70 25℃ 70 15V 60 50 11V 50 IC(A) 13V IC(A) 60 9V 40 40 7V 30 30 20 20 10 10 0 0 VGE = 15V 0 1 2 3 4 5 0 1 2 VCE(V) 4 5 6 VCE(V) Fig. 7 Switching times vs. gate resistor Fig. 8 Switching times vs. collector current 1000 1000 t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] 3 100 td(off) tf td(on) tr 100 10 td(off) tf td(on) tr Common Emitter VCC = 600V, VGE = 15V, IC=40A Ta=25℃ 10 Common Emitter VCC = 600V, VGE = 15V, RG=12Ω Ta=25℃ 1 0 5 10 15 20 25 30 35 40 45 Rg (Ω) http://www.superic-tech.com 0 10 20 30 40 50 60 70 80 90 IC(A) 6 2018.06 / Rev3.3 SPT40N120F1A Fig. 9 Switching loss vs. gate resistor Fig. 10 Switching loss vs. collector current 14 4.5 4 Common Emitter VCC = 600V, VGE = 15V, RG=12Ω Ta=25℃ Eoff Eon Eoff Eon 12 3.5 Switching loss (mJ) Switching loss (mJ) 10 3 2.5 2 1.5 8 6 4 1 0.5 2 Common Emitter VCC = 600V, VGE = 15V, IC=40A Ta=25℃ 0 0 0 5 10 15 20 25 30 35 40 45 0 10 20 30 Rg (Ω) 40 50 60 70 80 90 Ic (A) Fig. 11 Gate charge characteristics Fig. 12 Capacitance characteristics 10000 15 240V 600V 960V 12 Ciss(pF) Coss(pF) 1000 Crss(pF) VGE (V) Capacitance 9 6 100 3 Common Emitter VGE = 0V, f = 1MHz Ta=25℃ Common Emitter IC= 40A ,Ta=25℃ 0 0 50 100 150 200 250 300 Qg (nC) http://www.superic-tech.com 10 0 10 20 VCE(V) 7 2018.06 / Rev3.3 30 SPT40N120F1A http://www.superic-tech.com 8 2018.06 / Rev3.3