SPT50N65F1A1

SPT50N65F1A1 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer VCE 650 V and high avalanche ruggedness for motion IC 50 A control, solar application and welding machine. VCE(SAT) IC=50A 1.65 V low switching losses, high energy efficiency FEATURES  High breakdown voltage up to 650V for improved reliability  Trench-Stop Technology offering :  High speed switching  High ruggedness, temperature stable  Low VCEsat  Easy parallel switching capability due to positive temperature coefficient in VCEsat  Enhanced avalanche capability APPLICATION  Uninterruptible Power Supplies  Inverter  Welding Converters  PFC applications  Converter with high switching frequency Product SPT50N65F1A1 Package TO247 Packaging Tube http://www.superic-tech.com 1 2018.10 / Rev3.4 SPT50N65F1A1 Maximum Ratings （Tj= 25℃ unless otherwise specified） Parameter Symbol Value Unit Collector-Emitter Breakdown Voltage VCE 650 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC 100 50 A Diode Forward current, limited by Tjmax TC = 25°C TC = 100°C IF 100 50 A 200 A 260 W -40...+150 °C -55...+150 °C 260 °C Turn off safe operating area VCE ≤650V, Tj ≤ 150°C Power dissipation , Tj=25℃ Ptot Operating junction temperature Tj Ts Storage temperature Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s Thermal Resistance Parameter Symbol Max. Value Unit IGBT thermal resistance, junction - case Rθ(j-c) 0.48 K/W Diode thermal resistance, junction - case Rθ(j-c) 1.1 K/W Thermal resistance, junction - ambient Rθ(j-a) 40 K/W http://www.superic-tech.com 2 2018.10 / Rev3.4 SPT50N65F1A1 Electrical Characteristics （Tj= 25℃ unless otherwise specified） Parameter Symbol Conditions Min Typ Max Unit - V Static VGE=0V , IC=250uA 650 VGE=0V , IC=1mA 650 VGE(th) VGE=VCE, IC=250uA 4.0 VCE(sat) VGE=15V, IC=50A Tj = 25°C Tj = 150°C Collector-Emitter Breakdown Voltage BVCES Gate Threshold Voltage Collector-Emitter Saturation Voltage Zero gate voltage collector current ICES VCE = 650V, VGE = 0V Tj = 25°C Tj = 150°C Gate-emitter leakage current IGES VCE = 0V, VGE = 20V Transconductance gfs VCE = 20V, IC = 50A Parameter Symbol Conditions - - Min V 5.0 6.0 V 1.65 2.05 2.0 V V 0.1 40 1000 μA 100 nA - S Max Unit 50 Typ Dynamic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG http://www.superic-tech.com 3800 VCE = 30V, VGE = 0V, f = 1MHz 130 pF 70 VCC = 520V, IC = 50A, VGE = 15V 3 - 162 - nC 2018.10 / Rev3.4 SPT50N65F1A1 Switching Characteristic, Inductive Load Parameter Symbol Conditions Min Typ Max td(on) - 60 - tr - 55 - - 170 - - 80 - Unit Dynamic Tj=25C Turn-on Delay Time Rise Time Turn-off Delay Time td(off) Fall Time tf VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12Ω ns ns ns ns Turn-on Energy Eon - 2.2 - mJ Turn-off Energy Eoff - 0.6 - mJ td(on) - 60 - tr - 60 - - 172 - - 90 - Dynamic Tj=150C Turn-on Delay Time Rise Time Turn-off Delay Time td(off) Fall Time tf VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12Ω ns ns ns ns Turn-on Energy Eon - 2.35 - mJ Turn-off Energy Eoff - 0.82 - mJ Max Unit Electrical Characteristics of the DIODE（Tj= 25℃ unless otherwise specified） Parameter Symbol Conditions Min Typ - 2.4 - V - 90 - ns - 17 - A - 900 - nC Dynamic Diode Forward Voltage VFM Reverse Recovery Time Trr Reverse Recovery Current Irr Reverse Recovery Charge Qrr http://www.superic-tech.com IF = 50A IF= 40A, VR = 300V, di/dt= 600A/μs, 4 2018.10 / Rev3.4 SPT50N65F1A1 Fig. 1 FBSOA characteristics Fig. 2 Power dissipation as a function of TC 300 100 250 tP = 10μs 200 50μs 10 Ptot(W) IC(A) 100μs 150 500μs 1ms DC 100 1 50 Ta=25°C, Tj ≤150C , VGE=15V 0 0.1 1 10 100 25 1000 50 75 125 150 Fig. 4 Saturation voltage characteristics 200 VGE = 20V 180 150℃ 17V 25℃ 160 15V 140 13V 11V 120 9V IC(A) IC(A) Fig. 3 Output characteristics 200 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 100 TC(℃) VCE(V) 7V 100 80 60 40 20 VGE = 15V 0 0 1 2 3 4 5 0 VCE(V) http://www.superic-tech.com 1 2 3 4 5 6 VCE(V) 5 2018.10 / Rev3.4 SPT50N65F1A1 Fig. 5 Switching times vs. gate resistor 1000 Fig. 6 Switching times vs. collector current 1000 td(off) td(off) tf tf td(on) td(on) tr t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] tr 100 100 Common Emitter VCC = 400V, VGE = 15V, IC=50A Ta=25℃ Common Emitter VCC = 400V, VGE = 15V, RG=12Ω Ta=25℃ 10 10 0 5 10 15 20 25 30 35 40 45 50 55 60 65 0 10 20 30 40 50 60 70 80 90 100 110 Rg (Ω) IC(A) Fig. 7 Switching loss vs. gate resistor Fig. 8 Switching loss vs. collector current 4 4.5 Eoff Eon 3.5 3.5 Switching loss (mJ) 3 Switching loss (mJ) Eoff Eon 4 2.5 2 1.5 3 2.5 2 1.5 1 1 0.5 Common Emitter VCC = 400V, VGE = 15V, IC=50A Ta=25℃ 0 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 0 Rg (Ω) http://www.superic-tech.com Common Emitter VCC = 400V, VGE = 15V, RG=12Ω, Ta=25℃ 0.5 10 20 30 40 50 60 70 80 90 100 110 Ic (A) 6 2018.10 / Rev3.4 SPT50N65F1A1 Fig. 9 Gate charge characteristics Fig. 10 Capacitance characteristics 10000 15 130V 520V 12 Ciss(pF) Coss(pF) 1000 Crss(pF) Capacitance VGE (V) 9 6 100 3 Common Emitter IC= 50A ,Ta=25℃ Common Emitter VGE = 0V, f = 1MHz Ta=25℃ 0 10 0 50 100 150 200 0 Qg (nC) http://www.superic-tech.com 10 20 30 VCE(V) 7 2018.10 / Rev3.4 SPT50N65F1A1 http://www.superic-tech.com 8 2018.10 / Rev3.4