SPT60N65F1A1

SPT75N65F1 650V /60A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for motion control, solar application and welding machine. VCE 650 V IC 60 A VCE(SAT) IC=60A 1.85 V FEATURES  High breakdown voltage up to 650V for improved reliability  Trench-Stop Technology offering :  High speed switching  High ruggedness, temperature stable  Low VCEsat  Easy parallel switching capability due to positive temperature coefficient in VCEsat  Enhanced avalanche capability APPLICATION  Uninterruptible Power Supplies  Inverter  Welding Converters  PFC applications  Converter with high switching frequency Product SPT 60N65F1A1 Package TO247 Packaging Tube http://www.superic-tech.com 1 2019.01 / Rev3.5 SPT60N65F1A1 Maximum Ratings （Tj= 25℃ unless otherwise specified） Parameter Symbol Value Unit Collector-Emitter Breakdown Voltage VCE 650 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC 120 60 A Diode Forward current, limited by Tjmax TC = 25°C TC = 100°C IF 120 60 A Continuous Gate-emitter voltage VGE ±20 V Transient Gate-emitter voltage VGE ±30 V - 180 A Pulse collector current, VGE =15V, tp limited by Tjmax ICM 180 A Power dissipation , Tj=25°C Ptot 260 W Operating junction temperature Tj -40...+150 °C Storage temperature Ts -55...+150 °C - 260 °C Turn off safe operating area VCE ≤650V, Tj ≤ 150°C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s Thermal Resistance Symbol Parameter Max. Value Unit IGBT thermal resistance, junction - case Rθ(j-c) 0.48 K/W Diode thermal resistance, junction - case Rθ(j-c) 1.1 K/W Thermal resistance, junction - ambient Rθ(j-a) 40 K/W http://www.superic-tech.com 2 2019.01 / Rev3.5 SPT75N65F1 Electrical Characteristics （Tj= 25℃ unless otherwise specified） Parameter Symbol Conditions Min Typ Max Unit - V Static VGE=0V , IC=250uA 650 VGE=0V , IC=1mA 650 VGE(th) VGE=VCE, IC=250uA 4.0 VCE(sat) VGE=15V, IC=60A Tj = 25°C Tj = 150°C Collector-Emitter Breakdown Voltage BVCES Gate Threshold Voltage Collector-Emitter Saturation Voltage Zero gate voltage collector current ICES VCE = 650V, VGE = 0V Tj = 25°C Tj = 150°C Gate-emitter leakage current IGES VCE = 0V, VGE =±20V Transconductance gfs VCE = 20V, IC = 60A Parameter Symbol Conditions - - Min V 5.0 6.0 V 1.85 2.25 2.2 V V 0.1 40 1000 μA 100 nA - S Max Unit 52 Typ Dynamic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG http://www.superic-tech.com 3800 VCE = 30V, VGE = 0V, f = 1MHz 130 pF 70 VCC = 520V, IC = 60A, VGE = 15V 3 - 158 - 2019.01 / Rev3.5 nC SPT75N65F1 Switching Characteristic, Inductive Load Parameter Symbol Conditions Min Typ Max td(on) - 56 - tr - 79 - - 165 - - 81 - Unit Dynamic Tj=25C Turn-on Delay Time Rise Time Turn-off Delay Time td(off) Fall Time tf VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12Ω ns ns ns ns Turn-on Energy Eon - 2.2 - mJ Turn-off Energy Eoff - 0.89 - mJ Max Unit Electrical Characteristics of the DIODE（Tj= 25℃ unless otherwise specified） Parameter Symbol Conditions Min Typ - 2.9 - V - 90 - ns - 17 - A - 900 - nC Dynamic Diode Forward Voltage VFM Reverse Recovery Time Trr Reverse Recovery Current Irr Reverse Recovery Charge Qrr http://www.superic-tech.com IF = 60A IF= 40A, VR = 300V, di/dt= 600A/μs, 4 2019.01 / Rev3.5 SPT75N65F1 Fig. 1 FBSOA characteristics Fig. 2 Power dissipation as a function of TC 300 100 250 tP = 10μs 200 50μs 100μs 10 Ptot(W) 500μs IC(A) 1ms DC 150 100 1 50 Ta=25°C, Tj ≤150C , VGE=15V 0 0.1 1 10 100 25 1000 50 75 125 150 Fig. 4 Saturation voltage characteristics 200 VGE = 20V 180 17V 150℃ 15V 25℃ 160 13V 11V 140 9V 7V 120 IC(A) IC(A) Fig. 3 Output characteristics 200 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 100 TC(℃) VCE(V) 100 80 60 40 20 VGE = 15V 0 0 1 2 3 4 5 0 VCE(V) 1 2 3 4 5 6 VCE(V) http://www.superic-tech.com 5 2019.01 / Rev3.5 SPT75N65F1 Fig. 5 Switching times vs. gate resistor 1000 Fig. 6 Switching times vs. collector current 1000 td(off) td(off) tf tf td(on) td(on) tr t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] tr 100 100 Common Emitter VCC = 400V, VGE = 15V, IC=60A Ta=25℃ Common Emitter VCC = 400V, VGE = 15V, RG=12Ω Ta=25℃ 10 10 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 10 20 30 40 50 60 70 80 90 100 110 IC(A) Rg (Ω) Fig. 7 Switching loss vs. gate resistor Fig. 8 Switching loss vs. collector current 4.5 4.5 Eoff Eon Eoff Eon 4 3.5 3.5 3 3 Switching loss (mJ) Switching loss (mJ) 4 2.5 2 1.5 2.5 2 1.5 1 1 Common Emitter VCC = 400V, VGE = 15V, IC=60A Ta=25℃ 0.5 Common Emitter VCC = 400V, VGE = 15V, RG=12Ω, Ta=25℃ 0.5 0 0 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 Ic (A) Rg (Ω) http://www.superic-tech.com 10 20 30 40 50 60 70 80 90 100 110 6 2019.01 / Rev3.5 SPT75N65F1 Fig. 9 Gate charge characteristics Fig. 10 Capacitance characteristics 15 10000 12 Ciss(pF) Coss(pF) 1000 130V 6 Crss(pF) Capacitance VGE (V) 9 520V 100 3 Common Emitter IC= 60A ,Ta=25℃ Common Emitter VGE = 0V, f = 1MHz Ta=25℃ 10 0 0 50 100 150 0 200 Qg (nC) http://www.superic-tech.com 10 20 30 VCE(V) 7 2019.01 / Rev3.5 SPT75N65F1 http://www.superic-tech.com 8 2019.01 / Rev3.5