WSD20L70DN

WSD20L70DN P-Ch MOSFET General Description Product Summery The WSD20L70DN is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -20V 6.7mΩ -70A Applications The WSD20L70DN meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology DFN3X3-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ 10s Steady State Units -20 V ± V 1 -70 A 1 -45 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V 1 Continuous Drain Current, VGS @ -10V 1 ID@TA=70℃ Continuous Drain Current, VGS @ -10V IDM Pulsed Drain Current2 -36 -30 A -28 -23 A -200 A 3 EAS Single Pulse Avalanche Energy 180 mJ IAS Avalanche Current -60 A 83 W PD@TC=25℃ 4 Total Power Dissipation 4 5.2 4.0 PD@TA=25℃ Total Power Dissipation W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 55 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 20 ℃/W --- 1.5 ℃/W RθJC www.winsok.tw Typ. 1 Thermal Resistance Junction-Case Page 1 Dec.2014 WSD20L70DN P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.0232 --- V/℃ --- 6.7 7.9 VGS=-2.5V , ID=-12A --- 8.4 9.8 VGS=-1.8V , ID=-9A --- 10.3 12.2 VGS=-1.5V , ID=-8A --- 12.3 15.5 VGS=-1.2V , ID=-5A --- 17.6 19.5 -0.2 -0.6 -0.9 V --- 4.6 --- mV/℃ VDS=-20V , VGS=0V , TJ=25℃ --- --- -1 VDS=-20V , VGS=0V , TJ=55℃ --- --- -5 VGS=-4.5V , ID=-16A RDS(ON) VGS(th) 2 Static Drain-Source On-Resistance Gate Threshold Voltage VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-20A --- 110 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3 --- Ω --- 70 100 --- 9.2 --- Qg Total Gate Charge (-4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 18.4 --- Turn-On Delay Time --- 18 --- Td(on) VDS=-10V , VGS=-4.5V , ID=-16A uA nC Rise Time VDD=-10V , VGS=-4.5V , --- 52 --- Turn-Off Delay Time RG=3Ω ID=-1A ,RL=0.5Ω --- 285 --- Fall Time --- 123 --- Ciss Input Capacitance --- 5625 --- Coss Output Capacitance --- 927 --- Crss Reverse Transfer Capacitance --- 716 --- Min. Typ. Max. Unit 100 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions Single Pulse Avalanche Energy5 VDD=-10V , L=0.5mH , IAS=-16A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge --- --- -10 A --- --- -100 A VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V IF=-16A,dI/dt=100A/µs, TJ=25℃ --- 78 --- nS --- 495 --- nC VG=VD=0V , Force Current Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-10V,VGS=-10V,L=0.1mH,IAS=-16A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WSD20L70DN P-Ch MOSFET Typical Characteristics 150 18 -ID Drain Current (A) 125 ID=-16A VGS=-4.5V VGS=-2.5V 100 12 75 VGS=-1.8V 50 7 VGS=-1.5V VGS=-1.2V 25 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 3 0.2 4.5 3.5 -VDS , Drain-to-Source Voltage (V) 12 Fig.2 On-Resistance vs. G-S Voltage Fig.1 Typical Output Characteristics 5 -VGS Gate to Source Voltage (V) -IS Source Current(A) VDS=-10V 8 TJ=150℃ TJ=25℃ 4 0 0.00 ID=-16A 4 3 2 1 0 0.25 0.50 0.75 1.00 0 -VSD , Source-to-Drain Voltage (V) 30 40 80 60 QG , Total Gate Charge (nC) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics of Reverse 2.0 Normalized On Resistance 1.5 Normalized VGS(th) 20 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature (℃ ) 150 -50 Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Page 3 Dec.2014 WSD20L70DN P-Ch MOSFET 1000.00 10000 F=1.0MHz 10us Ciss 1000 100us 10.00 Coss -ID (A) Capacitance (pF) 100.00 Crss 100 1ms 10ms 100ms 1.00 DC 0.10 TC=25℃ Single Pulse 0.01 10 1 5 9 13 17 21 0.1 25 1 -VDS , Drain to Source Voltage (V) Fig.7 Capacitance 10 -VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM SINGLE PULSE TON T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Unclamped Inductive Switching Waveform Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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