WSD30150DN56

WSD30150DN56 N-Ch MOSFET Product Summery General Description The WSD30150DN56 is the highest performance trench N-Ch MOSFET with extreme high celldensity ,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 1.8mΩ 150A Applications The WSD30150DN56 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System Features z Power Tool Application z Advanced high cell density Trench technology DFN5X6-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage 30 V Gate-Source Voltage ±20 V 1,7 150 A 1,7 83 A 200 A 125 mJ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy IAS Avalanche Current 50 A W PD@TC=25℃ Total Power Dissipation 62.5 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 4 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 30 ℃/W --- 2 ℃/W Dec.2014 WSD30150DN56 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.02 --- V/℃ --- 1.8 2.4 2.4 3.2 1.4 1.7 2.5 V --- -6.1 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=10V , ID=20A VGS=4.5V , ID=15A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=10A --- 27 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 0.8 1.5 Ω --- 26 --- --- 9.5 --- --- 11.4 ----- Qg Total Gate Charge (4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V , VGS=4.5V , ID=30A uA nC --- 20 Rise Time VDD=15V , VGEN=10V , RG=6Ω, --- 12 --- Turn-Off Delay Time ID=1A, RL=15Ω. --- 69 --- Fall Time --- 29 --- Ciss Input Capacitance --- 3200 --- Coss Output Capacitance --- 680 --- Crss Reverse Transfer Capacitance --- 320 --- Min. Typ. Max. Unit 98 --- --- mJ Min. Typ. Max. Unit A Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=30A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage 2 VG=VD=0V , Force Current VGS=0V , IS=A , TJ=25℃ --- --- 30 --- --- 200 A --- --- 1.2 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t