WSD3060DN

WSD3060DN N-Ch MOSFET General Description Product Summery The WSD3060DN is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 4.7mΩ 60A Applications The WSD3060DN meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Features z Load Switch z Advanced high cell density Trench technology DFN3.3X3.3-8 Pin Configuration Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ 1 Continuous Drain Current, VGS @ 10V 60 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 48 A 1 13 A 1 10 A 140 A Avalanche Energy ,Single Pulse (L=0.5mH) 100 mJ pulse(L=0.5mH)3 ID@TA=25℃ ID@TA=70℃ IDM@TC=25℃ EAS IAS PD@TC=25℃ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 Avalanche Current ,Single 20 A 4 50 W 4 Total Power Dissipation PD@TA=25℃ Total Power Dissipation 3.6 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 70 ℃/W --- 2.5 ℃/W Dec.2014 WSD3060DN N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.028 --- V/℃ VGS=10V , ID=40A --- 4.7 5.7 VGS=4.5V , ID=20A --- 5.8 7.6 1.2 1.8 2.5 V --- -6.16 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=40A --- 95 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.0 2.9 Ω Qg Total Gate Charge (4.5V) --- 20 28.0 Qgs Gate-Source Charge --- 7.6 10.6 Qgd Gate-Drain Charge --- 7.2 10.1 Td(on) Tr Td(off) Tf VDS=15V , VGS=4.5V , ID=40A --- 15 28 Rise Time VDD=15V , VGen=10V , --- 13 24 Turn-Off Delay Time RG=3.3Ω, ID=1A, RL=10Ω. --- 32 57 --- 9 17 Turn-On Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz uA nC ns --- 1500 1820 --- 260 310 --- 130 190 Min. Typ. Max. Unit 63 --- --- mJ Min. Typ. Max. Unit --- --- 10 A --- --- 140 A --- --- 1 V --- 21 --- nS --- 7 --- nC pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.5mH , IAS=20A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,6 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=40A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t