WSD3066DN

WSD3066DN N-Ch MOSFET General Description Product Summery The WSD3066DN is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 5.5mΩ 66A Applications The WSD3066DN meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology DFN3X3-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ 1 Continuous Drain Current, VGS @ 10V 66 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 40 A 1 15 A 1 10 A 150 A 125 mJ ID@TA=25℃ ID@TA=70℃ IDM@TC=25℃ EAS IAS PD@TC=25℃ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 Avalanche Energy ,Single Pulse (L=0.1mH) Avalanche Current ,Single pulse(L=0.1mH)3 50 A 4 45 W 4 Total Power Dissipation PD@TA=25℃ Total Power Dissipation 1.78 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 70 ℃/W --- 2.7 ℃/W Dec.2014 WSD3066DN N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.028 --- V/℃ VGS=10V , ID=40A --- 4.7 5.7 VGS=4.5V , ID=20A --- 5.8 7.6 1.5 1.8 2.5 V --- -6.06 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 30 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 44 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.0 1.1 Ω Qg Total Gate Charge (4.5V) --- 27.5 38.5 Qgs Gate-Source Charge --- 9.6 13.4 Qgd Gate-Drain Charge --- 9.4 13.7 --- 18.5 34 --- 11.3 21 --- 62.5 114 --- 23.5 43 --- 1320 --- --- 610 --- --- 112 --- Min. Typ. Max. Unit --- 125 --- mJ Min. Typ. Max. Unit --- --- 15 A --- --- 45 A --- --- 1 V --- 23 --- nS --- 7 --- nC Td(on) Tr Td(off) Tf VDS=15V , VGS=4.5V , ID=20A Turn-On Delay Time VDD=15V , VGen=10V , Rise Time RG=6Ω, ID=1A, RL=15Ω. Turn-Off Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz uA nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.5mH , IAS=20A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,6 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=40A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t