WSD30L30DN

WSD30L30DN P-Ch MOSFET General Description Product Summery The WSD30L30DN is the highest performance trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -30V 15mΩ -32A Applications The WSD30L30DN meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology DFN3.3X3.3-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ 10s Steady State Units -30 V ±20 V 1 -32 A 1 -20 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V 1 -13 -10.5 A 1 -8.7 -8.4 A Continuous Drain Current, VGS @ -10V ID@TA=70℃ Continuous Drain Current, VGS @ -10V IDM Pulsed Drain Current2 -70 A EAS Single Pulse Avalanche Energy 49 mJ IAS Avalanche Current -14 A 29.8 W PD@TC=25℃ 3 4 Total Power Dissipation 4 3.5 3.1 PD@TA=25℃ Total Power Dissipation W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJA RθJC www.winsok.tw Parameter Typ. Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient (t ≤10s) 1 1 Thermal Resistance Junction-Case Page 1 Max. Unit 75 ℃/W --- 40 ℃/W --- 4.2 ℃/W --- Dec.2014 WSD30L30DN P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.022 --- V/℃ VGS=-10V , ID=-16A --- 15 19 VGS=-4.5V , ID=-8A --- 24 32 -1.3 -1.8 -2.3 V --- 4.6 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-15A --- 15 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 4 --- Ω Qg Total Gate Charge (-4.5V) --- 20 24 --- 1.1 --- Gate-Drain Charge --- 7.7 --- Turn-On Delay Time --- 11.2 --- Qgs Qgd Td(on) VDS=-15V , VGS=-4.5V , ID=-16A Gate-Source Charge uA nC Rise Time VDD=-15V , VGS=-10V , RG=6Ω, --- 10.6 --- Turn-Off Delay Time ID=-1A, RL=15Ω. --- 37 --- Fall Time --- 50 --- Ciss Input Capacitance --- 1000 --- Coss Output Capacitance --- 220 --- Crss Reverse Transfer Capacitance --- 170 --- Min. Typ. Max. Unit 40 --- --- mJ Min. Typ. Max. Unit --- --- -14 A --- --- -70 A Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.5mH , IAS=-14A Diode Characteristics Symbol IS ISM Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 VG=VD=0V , Force Current VSD Diode Forward Voltage VGS=0V , IS=-2.9A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time IF=-6A,dI/dt=100A/µs , TJ=25℃ --- 19 --- nS --- 10 --- nC Qrr Reverse Recovery Charge Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, t