WST6008

WST6008 N-Ch MOSFET General Description Product Summery The WST6008 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. RDSON 30V 140mΩ ID 154mA Applications The WST6008 meet the RoHS and Green Product requirement with full function reliability approved. z Power Management Load Switch z Level Shift zPortable Applications such as Cell Phones, Media Players, Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc. Features • • • • BVDSS SOT-523 Pin Configuration Low Gate Charge for Fast Switching Small 1.6 X 1.6 mm Footprint ESD Protected Gate We declare that the material of product is ROHS compliant and halogen free. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±10 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 154 mA ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 120 mA IDM Pulsed Drain Current 2 618 mA 300 3 mW PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA www.winsok.tw Parameter Typ. Thermal Resistance Junction-Ambient Page 1 1 ---416 Max. Unit ℃/W Dec.2014 WST6008 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage VGS=0V , ID=100uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.05 --- V/℃ VGS=4.5V , ID=154mA --- 1.4 7.0 --- 2.3 7.5 1.0 1.5 V --- mV/℃ VGS=2.5V , ID=154mA VGS=VDS , ID =100uA 0.5 Ω --- --- 1.0 VDS=20V , VGS=0V , TJ=85℃ --- --- 1.0 Gate-Source Leakage Current VGS=±5V , VDS=0V --- --- ±1.0 uA Forward Transconductance VDS=5V , ID=0.1A --- 80 --- mS --- 13 --- --- 15 --- --- 98 --- --- 60 --- --- 11.5 --- --- 10 --- --- 3.5 --- Min. Typ. Max. Unit --- --- 100 mA --- --- 0.4 A --- 0.77 Drain-Source Leakage Current IGSS gfs Tf Unit VDS=30V , VGS=0V , TJ=25℃ IDSS Td(off) Max. 0.9 VGS(th) Temperature Coefficient Tr Typ. --- △VGS(th) Td(on) Min. Turn-On Delay Time VDS=5V , VGS=4.5V , Rise Time RG=10Ω, ID=75mA Turn-Off Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=5V , VGS=0V , f=1MHz uA ns pF Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,4 Continuous Source Current 2,4 Pulsed Source Current 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=0.154mA , TJ=25℃ 0.9 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature. 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WST6008 N-Ch MOSFET Typical Performance Characteristics VGS = 10 V 5V 2.8 V 2.4 V 0.14 2V 0.12 0.1 0.08 0.06 0.04 0.02 1.4 V 0 1.2 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS = 5 V ID, DRAIN CURRENT (AMPS) 0.16 0.2 TJ = 25°C 0.16 0.12 0.08 TJ = 125°C 0.04 TJ = 25°C TJ = −55°C 0 0.6 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1.2 0.8 1 1.4 1.6 1.8 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) On−Region Characteristics Transfer Characteristics 0.8 0.4 1.2 2.0 1.6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 0.2 0.18 2.5 VGS = 4.5 V TJ = 125°C 2 1.5 TJ = 25°C 1 TJ = −55°C 0.5 0 0.05 0.1 0.15 ID, DRAIN CURRENT (AMPS) 0.2 2.5 TJ = 25°C VGS = 2.5 V 2 1.5 VGS = 4.5 V 1 0.5 0 2 1000 ID = 0.15 A VGS = 4.5 V VGS = 0 V 1.6 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0.2 On−Resistance vs. Drain Current and Gate Voltage On−Resistance vs. Drain Current and Temperature 1.8 0.05 0.1 0.15 ID, DRAIN CURRENT (AMPS) 1.4 1.2 1 0.8 0.6 100 TJ = 150°C 10 TJ = 125°C 0.4 0.2 0 −50 1 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) On−Resistance Variation with Temperature Drain−to−Source Leakage Current vs. Voltage www.winsok.tw Page 3 30 Dec.2014 20 Ciss 1000 TJ = 25°C VDD = 5.0 V ID = 75 mA VGS = 4.5 V Crss t, TIME (ns) C, CAPACITANCE (pF) 25 15 10 Ciss tr td(on) 10 Coss 5 0 10 td(off) tf 100 VDS = 0 V 5 VGS = 0 V 0 VGS Crss 5 10 15 20 1 10 RG, GATE RESISTANCE (OHMS) 1 VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Resistive Switching Time Variation vs. Gate Resistance Capacitance Variation IS, SOURCE CURRENT (AMPS) 0.16 0.14 VGS = 0 V TJ = 25°C 0.12 0.1 0.08 0.06 0.04 0.02 0 0.5 0.55 0.6 0.65 0.7 0.75 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Diode Forward Voltage vs. Current 0.8 100 WST6008 N-Ch MOSFET 6273DFNDJH2XWOLQH'LPHQVLRQV Symbol A A1 A2 b1 b2 c D E E1 e e1 L L1  Dimensions In Millimeters Min. Max. 0.700 0.900 0.000 0.100 0.700 0.800 0.150 0.250 0.250 0.350 0.100 0.200 1.500 1.700 0.700 0.900 1.450 1.750 0.500 TYP. 0.900 1.100 0.400 REF. 0.260 0.460 0° 8° Dimensions In Inches Min. Max. 0.028 0.035 0.000 0.004 0.028 0.031 0.006 0.010 0.010 0.014 0.004 0.008 0.059 0.067 0.028 0.035 0.057 0.069 0.020 TYP. 0.035 0.043 0.016 REF. 0.010 0.018 0° 8° 627 6XJJHVWHG3DG/D\RXW  www.winsok.tw Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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