WST6003

WST6003 P-Ch MOSFET Product Summery Features D D D D D D D TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 14 ns S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. BVDSS RDSON ID -20V 1200mΩ -0.35A Applications D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers BENEFITS D D D D D SOT-523 Pin Configuration Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation 3 Drain 1 2 Gate Source Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±6 V ID@Tc=25℃ Continuous Drain Current, VGS @ -4.5V1 -0.35 A ID@Tc=70℃ 1 -0.4 A -1 A IDM Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current 2 PD@TA=25℃ Total Power Dissipation 0.15 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 3 Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W Dec.2014 WST6003 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.016 --- V/℃ --- 0.8 1.2 VGS=-2.5V , ID=-0.3A --- 1.2 1.6 VGS=-1.8V , ID=-0.01A --- 1.8 2.7 -0.45 --- --- V --- 3.97 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=-4.5V , ID=-0.35A RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage VGS=VDS , ID =-250uA Ω △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-1A --- 6.2 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 9.5 12 Ω --- 1500 --- --- 150 --- Gate-Drain Charge --- 450 --- Turn-On Delay Time --- 5 --- Qg Qgs Qgd Td(on) Tr Td(off) Tf Total Gate Charge (-4.5V) Gate-Source Charge VDS=-15V , VGS=-4.5V , ID=-1A Rise Time VDD=-15V , VGS=-4.5V , --- 9 --- Turn-Off Delay Time RG=3.3Ω ID=-1A --- 35 --- --- 11 --- Fall Time uA pC ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Dec.2014 WST6003 P-Ch MOSFET Typical Characteristics For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. Output Characteristics Transfer Characteristics 1.0 1000 VGS = 5 thru 3 V TJ = –55_C 2.5 V 25_C 800 I D – Drain Current (mA) I D – Drain Current (A) 0.8 0.6 2V 0.4 1.8 V 0.2 600 125_C 400 200 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 VDS – Drain-to-Source Voltage (V) 1.0 2.5 3.0 Capacitance 4.0 120 100 3.2 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 2.0 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current VGS = 1.8 V 2.4 VGS = 2.5 V 1.6 VGS = 4.5 V Ciss 80 60 40 Coss 0.8 20 0.0 Crss 0 0 200 400 600 800 1000 0 4 ID – Drain Current (mA) Gate Charge 12 16 20 On-Resistance vs. Junction Temperature 1.6 r DS(on) – On-Resistance (W) (Normalized) VDS = 10 V ID = 250 mA 4 3 2 1 0 0.0 8 VDS – Drain-to-Source Voltage (V) 5 V GS – Gate-to-Source Voltage (V) 1.5 1.4 VGS = 4.5 V ID = 350 mA 1.2 VGS = 1.8 V ID = 150 mA 1.0 0.8 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.6 –50 1.6 www.winsok.tw –25 0 25 50 75 100 125 TJ – Junction Temperature_( C) Qg – Total Gate Charge (nC) Page 3 Dec.2014 WST6003 P-Ch MOSFET Typical Characteristics Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 5 TJ = 125_C r DS(on) – On-Resistance ( W ) IS – Source Current (mA) 1000 100 TJ = 25_C TJ = –55_C 10 1 0.0 4 3 ID = 350 mA 2 ID = 200 mA 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) IGSS vs. Temperature 3.0 0.2 2.5 ID = 0.25 mA 0.1 2.0 IGSS – (mA) V GS(th) Variance (V) Threshold Voltage Variance vs. Temperature 0.3 –0.0 1.5 –0.1 1.0 –0.2 0.5 –0.3 –50 –25 0 25 50 75 100 0.0 –50 125 VGS = 4.5 V –25 TJ – Temperature (_C) 0 25 50 75 100 125 TJ – Temperature (_C) BVGSS – Gate-to-Source Breakdown Voltage (V) BVGSS vs. Temperature 7 6 5 4 3 2 1 0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) www.winsok.tw Page 4 Dec.2014 WST6003 P-Ch MOSFET SOT-523 www.winsok.tw Page 5 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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