WSD2018DN22

WSD2018DN22 N-Ch MOSFET Product Summery General Description The WSD2018DN22 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS 20V RDSON ID 15mΩ(MAX) 12A Applications The WSD2018DN22 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features DFNWB2×2-6L-J Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=70℃ IDM Rating Units Drain-Source Voltage 20 V Gate-Source Voltage ±10 V 1 12 A 1 10 A 40 A Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 167 ℃/W --- 65 ℃/W Dec.2014 WSD2018DN22 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) 2 Static Drain-Source On-Resistance Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.027 --- V/℃ VGS=4.5V , ID=5A --- 10 15 VGS=2.5V , ID=5A --- 13 18 18 30 0.4 0.7 1.0 V mV/℃ VGS=1.8V , ID=5A VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient VGS=VDS , ID =250uA --- 2.56 --- VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 mΩ uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=4V , ID=9.7A 20 --- --- S Rg Gate Resistance f=1MHz --- 2.5 --- Ω Qg Total Gate Charge (4.5V) --- --- 32 Qgs Gate-Source Charge --- 2.5 --- Qgd Gate-Drain Charge --- 6.5 --- VDS=4V , VGS=5V , ID=10A --- 12 20 Rise Time VDD=4V , VGS=4.5V , RG=1Ω --- 10 25 Turn-Off Delay Time ID=10A ,RL=0.4Ω --- 65 70 Fall Time --- 20 60 Ciss Input Capacitance --- 1800 --- Coss Output Capacitance --- 650 --- Crss Reverse Transfer Capacitance --- 450 --- Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=4V , VGS=0V , f=1MHz nC ns pF Notes : 1.Surface mounted on FR4 board using 1 square inch pad size,1oz copper. 2.Surface mounted on FR4 board using the minimum pad size,1oz copper. 3. Pulse test : Pulse width=300μs, duty cycle≤2%. 4. These parameters have no way to verify. www.winsok.tw Page 2 Dec.2014 WSD2018DN22 N-Ch MOSFET Typical Characteristics Output Characteristics Transfer Characteristics 16 16 VGS=2V,3V,4V,5V VDS=3V Ta=25℃ Pulsed VGS=1.5V Pulsed 12 DRAIN CURRENT DRAIN CURRENT ID ID (A) (A) 12 8 VGS=1.2V 4 0 0 1 3 VDS Ta=25℃ 4 0 4 DRAIN TO SOURCE VOLTAGE Ta=100℃ 8 0 1 (V) 2 GATE TO SOURCE VOLTAGE 3 VGS (V) RDS(ON) —— VGS RDS(ON) —— ID 30 50 Pulsed Ta=25℃ Pulsed 25 (m) (m) RDS(ON) 15 ON-RESISTANCE RDS(ON) VGS=1.8V 20 VGS=2.5V 10 VGS=4.5V 5 30 20 Ta=100℃ 10 Ta=25℃ 0 1 2 5 DRAIN CURRENT 0 6 ID 0 (A) 2 6 GATE TO SOURCE VOLTAGE 8 GS 10 (V) Threshold Voltage IS —— VSD 13 10 1.2 VTH 1 Ta=100℃ THRESHOLD VOLTAGE IS (A) (V) Pulsed SOURCE CURRENT ON-RESISTANCE ID=5A 40 Ta=25℃ 0.1 0.01 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLT VOLTAGE A www.winsok.tw 1.0 SD 1.2 0.8 ID=250uA 0.4 0.0 25 (V) 50 75 JUNCTION TEMPERATURE Page 3 100 Tj 125 ( ℃) Dec.2014 WSD2018DN22 N-Ch MOSFET Output Characteristics Transfer Characteristics 16 16 VGS=2V,3V,4V,5V VDS=3V Ta=25℃ Pulsed VGS=1.5V Pulsed DRAIN CURRENT ID DRAIN CURRENT 12 ID (A) (A) 12 8 VGS=1.2V 4 0 0 1 2 3 VDS Ta=25℃ 4 4 DRAIN TO SOURCE VOLTAGE Ta=100℃ 8 0 5 0 (V) 1 2 GATE TO SOURCE VOLTAGE 3 VGS (V) RDS(ON) —— VGS RDS(ON) —— ID 30 50 Pulsed Ta=25℃ Pulsed 25 (m) (m) VGS=1.8V RDS(ON) 20 15 ON-RESISTANCE RDS(ON) ON-RESISTANCE ID=5A 40 VGS=2.5V 10 VGS=4.5V 5 30 20 Ta=100℃ 10 Ta=25℃ 0 1 2 5 DRAIN CURRENT 0 6 ID 0 (A) 2 6 8 GATE TO SOURCE VOLTAGE GS 10 (V) Threshold Voltage IS —— VSD 13 10 1.2 VTH 1 Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) Pulsed Ta=25℃ 0.1 0.01 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.winsok.tw 1.0 1.2 0.8 ID=250uA 0.4 0.0 25 VSD (V) 50 75 JUNCTION TEMPERATURE Page 4 100 Tj 125 ( ℃) Dec.2014 WSD2018DN22 N-Ch MOSFET DFNWB2X2-6L-J Package Outline Dimensions Symbol A A1 A3 D E D1 E1 D2 E2 k b e L Dimensions In Millimeters Min. Max. 0.700 0.800 0.000 0.050 0.203REF. 1.924 2.076 1.924 2.076 0.800 1.000 0.850 1.050 0.200 0.400 0.460 0.660 0.200MIN. 0.250 0.350 0.650TYP. 0.174 0.326 Dimensions In Inches Min. Max. 0.032 0.000 0.002 0.008REF. 0.076 0.082 0.076 0.082 0.031 0.039 0.033 0.041 0.008 0.016 0.018 0.026 0.008MIN. 0.010 0.014 0.026TYP. 0.007 0.013 DFNWB2X2-6L-J Suggested Pad Layout www.winsok.tw Page 5 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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