WSD20L120DN56

WSD20L120DN56 P-Ch MOSFET Product Summery General Description The WSD20L120DN56 is the highest performance trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -20V 2.1mΩ -120A Applications The WSD20L120DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology DFN5X6-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ 10s Steady State Units -20 V ±10 V 1 -120 A 1 -69.5 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V 1 -25 1 -24 Continuous Drain Current, VGS @ -10V ID@TA=70℃ Continuous Drain Current, VGS @ -10V IDM Pulsed Drain Current2 -22 A -18 A -340 A 3 EAS Single Pulse Avalanche Energy 300 mJ IAS Avalanche Current -36 A 130 W PD@TC=25℃ 4 Total Power Dissipation 4 6.8 6.25 PD@TA=25℃ Total Power Dissipation W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 54 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 18 ℃/W --- 1.6 ℃/W RθJC www.winsok.tw Typ. 1 Thermal Resistance Junction-Case Page 1 Dec.2014 WSD20L120DN56 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.0212 --- V/℃ VGS=-4.5V , ID=-20A --- 2.1 2.7 VGS=-2.5V , ID=-20A --- 2.8 3.7 -0.4 -0.6 -1.0 V --- 4.8 --- mV/℃ VDS=-20V , VGS=0V , TJ=25℃ --- --- -1 VDS=-20V , VGS=0V , TJ=55℃ --- --- -6 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-20A --- 100 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 5 Ω Qg Total Gate Charge (-4.5V) --- 100 --- Qgs Gate-Source Charge --- 21 --- --- 32 ----- Qgd VDS=-10V , VGS=-4.5V , ID=-20A Gate-Drain Charge uA nC --- 20 Rise Time VDD=-10V , VGEN=-4.5V , --- 50 --- Turn-Off Delay Time RG=3Ω ID=-1A ,RL=0.5Ω --- 100 --- Fall Time --- 40 --- Ciss Input Capacitance --- 4950 --- Coss Output Capacitance --- 380 --- Crss Reverse Transfer Capacitance --- 290 --- Min. Typ. Max. Unit 300 --- --- mJ Min. Typ. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-10V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.5mH , IAS=-36A Diode Characteristics Symbol Parameter Conditions --- --- Max. -70 --- --- -280 A VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V Reverse Recovery Time IF=-15A , dI/dt=100A/µs , --- 48 --- nS Reverse Recovery Charge TJ=25℃ --- 55 --- nC 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 trr Qrr VG=VD=0V , Force Current A Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t