WST3032

WST3032 N-Ch MOSFET General Description Product Summery The WST3032 is the highest performance trench NCH MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 30V 5Ω 200mA Applications The WST3032 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC z Networking DC-DC Power System z Load Switch Features SOT-323 Pin Configuration z High-speed switching z Green Device Available z ESD Protected:2KV Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 200 mA ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 100 mA 800 mA IDM Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 0.2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA www.winsok.tw Parameter Thermal Resistance Junction-Ambient Page 1 1 Typ. Max. Unit --- 625 ℃/W Dec.2014 WST3032 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.05 --- V/℃ VGS=10V , ID=0.2A --- --- 5 VGS=4.5V , ID=0.1A --- --- 5.5 Ω 1 1.5 2.0 V --- -3.7 --- mV/℃ VDS=30V , VGS=0V , TJ=25℃ --- --- 1 VDS=30V , VGS=0V , TJ=55℃ --- --- 5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±10 uA Forward Transconductance VDS=5V , ID=0.2A --- 940 --- mS --- 4.63 --- --- 18.9 --- --- 6.8 --- Fall Time --- 11.4 --- Ciss Input Capacitance --- 42 --- Coss Output Capacitance --- 15 --- Crss Reverse Transfer Capacitance --- 3 --- Min. Typ. Max. Unit --- --- 50 mA --- --- 0.2 A --- --- 1 V VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Td(on) Tr Td(off) Tf VGS=VDS , ID =250uA Turn-On Delay Time VDD=30V , VGS=10V , RG=6Ω, Rise Time ID=200mA ,RL=500Ω. Turn-Off Delay Time VDS=25V , VGS=0V , f=1MHz uA ns pF Diode Characteristics Parameter Symbol IS ISM VSD Conditions 1,4 Continuous Source Current 2,4 Pulsed Source Current 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=0.2A , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature. 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WST3032 N-Ch MOSFET Typical Characteristics 6.0 5.5 5.0 4.5 Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Capacitance Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ www.winsok.tw Page 3 Dec.2014 WST3032 N-Ch MOSFET Fig.8 Safe Operating Area Fig.10 Switching Time Waveform Fig.9 Normalized Maximum Transient Thermal Impedance www.winsok.tw Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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