WST2304

WST2304 N-Ch MOSFET General Description Product Summery The WST2304 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 20V 20mΩ 6.3A Applications The WST2304 meet the RoHS and Green Product requirement with full function reliability approved. z Power management in portable and battery operated products z One cell battery pack protection Features z Load Switch z Advanced high cell density Trench technology SOT-23N Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@Tc=25℃ ID@Tc=70℃ IDM Rating Units Drain-Source Voltage 20 V Gate-Source Voltage ±8 V 1 6.3 A 1 5.0 A 22 A Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1.0 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw 1 Thermal Resistance Junction-Case Page 1 Typ. Max. Unit --- 110 ℃/W --- 70 ℃/W Dec.2014 WST2304 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.028 --- V/℃ VGS=4.5V , ID=4A --- 20 25 VGS=2.5V , ID=3A --- 24 35 VGS=1.8V , ID=2A --- 32 44 0.3 0.7 1.0 V --- -3.21 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 ±100 nA VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- gfs Forward Transconductance VDS=5V , ID=5A --- 24 --- S Ω --- 1.8 4.2 --- 8.5 13 --- 1.56 2.5 Gate-Drain Charge --- 2.6 4.7 Turn-On Delay Time --- 6.0 8.7 Rg Gate Resistance Qg Total Gate Charge (4.5V) Qgs Gate-Source Charge Qgd Td(on) VDS=0V , VGS=0V , f=1MHz VDS=15V , VGS=4.5V , ID=5A uA nC Rise Time VDD=10V , VGS=10V , RG=3.3Ω --- 27 50 Turn-Off Delay Time ID=5A --- 23 38 Fall Time --- 8.5 17.1 Ciss Input Capacitance --- 574 --- Coss Output Capacitance --- 67 --- Crss Reverse Transfer Capacitance --- 60 --- Min. Typ. Max. Unit --- --- 2.8 A --- --- 22 A --- --- 1.2 V --- 10.2 --- nS --- 2.9 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,4 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,4 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=5A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t