WSF20N06

WSF20N06 N-Ch MOSFET General Description Product Summery The WSF20N06 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 60V 35mΩ 25A Applications The WSF20N06 meet the RoHS and Green Product requirement . z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z LCD/LED back light Features TO-252 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ 1 Continuous Drain Current, VGS @ 10V 25 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 27 A 1 8 A 1 10 A 100 A ID@TA=25℃ ID@TA=70℃ IDM Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 38 mJ IAS Avalanche Current PD@TC=25℃ 14 A 4 35 W 4 Total Power Dissipation PD@TA=25℃ Total Power Dissipation 3.3 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 75 ℃/W --- 3 ℃/W Dec.2014 WSF20N06 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.057 --- V/℃ VGS=10V , ID=16A --- 35 45 VGS=5V , ID=8A --- 40 50 1.0 1.6 2.5 V --- -5.68 --- mV/℃ VDS=60V , VGS=0V , TJ=25℃ --- --- 1 VDS=60V , VGS=0V , TJ=125℃ --- --- 100 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±16V , VDS=0V --- --- ±10 nA gfs Forward Transconductance VDS=25V , ID=18A --- 25 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 3.4 Ω Qg Total Gate Charge (4.5V) --- 20 --- Qgs Gate-Source Charge --- 7 --- Qgd Gate-Drain Charge --- 5 --- VDS=30V , VGS=10V , ID=18A uA nC --- 18 --- Rise Time VDD=30V , VGS=10V , --- 15 --- Turn-Off Delay Time RG=6.8Ω, ID=1A --- 60 --- Fall Time --- 31 --- Ciss Input Capacitance --- 650 --- Coss Output Capacitance --- 95 --- Crss Reverse Transfer Capacitance --- 60 --- Min. Typ. Max. Unit 19 --- --- mJ Min. Typ. Max. Unit --- --- 25 A --- --- 75 A --- --- 1.3 V --- 65 --- nS --- 85 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=30V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=15A Diode Characteristics Symbol IS ISM Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=20A , TJ=25℃ IF=20A ,dI/dt=100A/µs,TJ=25℃ Note : 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t