WSF50N10

WSF50N10 N-Ch MOSFET Product Summery General Description The WSF50N10 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS 100V RDSON ID 22mΩ 50A Applications The WSF50N10 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology TO-252 Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM Rating Units Drain-Source Voltage 100 V Gate-Source Voltage ±20 V 1 50 A 1 25 A 1 6.7 A 1 5.3 A 160 A mJ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy 81 IAS Avalanche Current 18 A 4 83 W 4 PD@TC=25℃ 3 Total Power Dissipation PD@TA=25℃ Total Power Dissipation 33 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 50 ℃/W --- 1.5 ℃/W Dec.2014 WSF50N10 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=20A --- 22 28 --- 24 32 1.0 2.0 3.0 V --- -5.52 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 10 VDS=80V , VGS=0V , TJ=55℃ --- --- 100 VGS=0V , ID=250uA VGS=4.5V , ID=15A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 25.7 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.0 1.2 Ω Qg Total Gate Charge (10V) --- 50 65 Qgs Gate-Source Charge uA --- 8 14 Gate-Drain Charge --- 10 18 Turn-On Delay Time --- 18 33 --- 9 17 Turn-Off Delay Time --- 56 101 Fall Time --- 14 26 Ciss Input Capacitance --- 2450 --- Coss Output Capacitance --- 150 --- Crss Reverse Transfer Capacitance --- 85 --- Min. Typ. Max. Unit 80 --- --- mJ Min. Typ. Max. Unit --- --- 20 A Qgd Td(on) Tr Td(off) Tf VDS=30V , VGS=10V , ID=20A VDD=30V , VGS=10V,ID=20A Rise Time VDS=30V , VGS=0V , f=1MHz nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=18A Diode Characteristics Symbol IS Parameter Conditions 1,6 Continuous Source Current 2,6 ISM Pulsed Source Current VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 2 VG=VD=0V , Force Current VGS=0V , IS=20A , TJ=25℃ IF=20A , dI/dt=100A/µs , TJ=25℃ --- --- 45 A --- --- 1.3 V --- 40 --- nS --- 83 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t