WSF60100

WSF60100 N-Ch MOSFET General Description Product Summery The WSF60100 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 6mΩ 60V 98A Applications The WSF60100 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z LCD/LED back light Features TO-252 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V 1 ID@TC=25℃ Continuous Drain Current, VGS @ 10V 100 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 80 A 1 14 A 1 11 A 285 A ID@TA=25℃ ID@TA=70℃ IDM Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 182 mJ IAS Avalanche Current PD@TC=25℃ 60 A 4 150 W 4 Total Power Dissipation PD@TA=25℃ Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 50 ℃/W --- 1 ℃/W Dec.2014 WSF60100 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.057 --- V/℃ VGS=10V , ID=20A --- 6 7 mΩ --- 8.4 10.5 2 3 4 V --- -5.68 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 VGS=10V , ID=20A ,TJ=125℃ VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 75 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 0.65 1.0 Ω Qg Total Gate Charge (4.5V) --- 54 75 Qgs Gate-Source Charge --- 23 35 Qgd Gate-Drain Charge --- 18 28 --- 19 24.4 --- 22 30 --- 33 32 Fall Time --- 6 10 Ciss Input Capacitance --- 4055 --- Coss Output Capacitance --- 346 --- Crss Reverse Transfer Capacitance --- 18 --- Min. Typ. Max. Unit 100 --- --- mJ Min. Typ. Max. Unit --- --- 46 A --- --- 60 A --- --- 1 V --- 26 --- nS --- 126 --- nC Td(on) Tr Td(off) Tf VDS=48V , VGS=4.5V , ID=15A Turn-On Delay Time VDD=30V , VGS=10V , Rise Time RG=3Ω, RL=1.5Ω. Turn-Off Delay Time VDS=15V , VGS=0V , f=1MHz uA nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=60A Diode Characteristics Symbol IS ISM Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=20A ,dI/dt=500A/µs,TJ=25℃ Note : 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t