WSP4608

WSP4608 N-Ch and P-Channel MOSFET Product Summery General Description The WSP4608 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 22mΩ 6.4A -30V 28mΩ -5.6A Applications Features z Power management in half bridge and inverters z DC-DC Converter z Advanced high cell density Trench technology Gate Charge z Super Low z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available z Load Switch SOP-8 Pin Configuration D1 D1 D2 D2 S1 G1 S2 G2 Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM N-Channel P-Channel 30 -30 V ±20 ±20 V 1 7 -6 A 1 6 -6 A 30 -30 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Units 2 3 EAS Single Pulse Avalanche Energy 72 59 mJ IAS Avalanche Current 21 -19 A 4 PD@TC=25℃ Total Power Dissipation 1 1 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ Max. Unit --- 83 ℃/W --- 51 ℃/W Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Dec.2014 WSP4608 N-Ch and P-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit 30 33 --- V --- 0.035 --- V/℃ --- 22 --- --- 34 --- --- 1.5 --- V --- -5.8 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 = VGS=0V , ID 250uA Reference to 25℃ , ID=1mA = VGS=10V , ID 6.4A = VGS=4.5V , ID 5.2A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=15V= , ID 5A --- 7.3 --- S Rg Gate Resistance VDS=20V , VGS=0V , f=1MHz --- 2.4 --- Ω Qg Total Gate Charge (4.5V) --- 7.2 --- Qgs Gate-Source Charge --- 1.4 --- Qgd Gate-Drain Charge --- 2.2 --- Td(on) VDS=20V , VGS=4.5V , ID=6A nC --- 4.1 --- Rise Time VDD=15V , VGS=10V , RG=3Ω --- 9.8 --- Turn-Off Delay Time ID=5A --- 15.5 --- Fall Time --- 6.0 --- Ciss Input Capacitance --- 407 --- Coss Output Capacitance --- 113 --- Crss Reverse Transfer Capacitance --- 57 --- Min. Typ. Max. Unit 16 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time uA VDS=25V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=10A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=5A , TJ=25℃ --- --- 6 A --- --- 23 A --- --- 1.1 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t