WSR140N08

WSR140N08 N-Ch MOSFET Product Summery General Description The WSR140N08 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 80V 4.8mΩ 140A Applications Power Management for Inverter Systems. Features TO-220FB-3L Pin Configuration z Advanced high cell density Trench technology D D z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed G z Green Device Available D S S Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 140 A TC=25°C 551** A TC=25°C 140 TC=100°C 91 TC=25°C 250 TC=100°C 125 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case 0.61 RθJA Thermal Resistance-Junction to Ambient 62.5 A W °C/W Avalanche Ratings EAS Avalanche Energy, Single Pulsed L=0.5mH 762*** mJ Note Note： ： * Repetitive rating ; pulse width limiited by junction temperatur ** Drain current is limited by junction temperature *** VD=64V www.winsok.tw Page 1 Dec.2014 WSR140N08 N-Ch MOSFET Electrical Characteristics Symbol (TC = 25°C Unless Otherwise Noted) Parameter Test Conditions Min. Typ. Max. Unit 80 - - V - - 1 - - 10 Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON)* VGS=0V, IDS=250µA VDS=80V, VGS=0V TJ=85°C µA Gate Threshold Voltage VDS=VGS, IDS=250µA 2.0 3.0 4.0 V Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA Drain-Source On-state Resistance VGS=10V, IDS=70A - 4.8 6.0 mΩ ISD=70 A, VGS=0V - 0.8 1.2 V - 30 - ns - 52 - nC - 1.6 - Ω - 4687 - - 665 - - 235 - - 26 - - 17 - - 41 - - 53 - - 115 - - 15 - - 44 - Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=70A, dlSD/dt=100A/µs Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=40V, R G=6 Ω, I DS =70A, V GS=10V, Turn-off Fall Time pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=64V, VGS=10V, IDS=70A nC Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%. www.winsok.tw Page 2 Dec.2014 WSR140N08 N-Ch MOSFET Typical Operating Characteristics Drain-Source On Resistance Output Characteristics 240 6.5 VGS= 5.5,6,7,8,9,10V RDS(ON) - On - Resistance (mW) 210 ID - Drain Current (A) 180 150 5V 120 4.5V 90 4V 60 30 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 5.0 4.5 4.0 3.5 3.0 6.0 VGS=10V 5.5 0 40 VDS - Drain - Source Voltage (V) 80 120 160 200 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 14 IDS=70A 1.6 IDS =250µA Normalized Threshold Voltage RDS(ON) - On - Resistance (mW) 12 10 8 6 4 2 0 1.4 1.2 1.0 0.8 0.6 0.4 3 4 5 6 7 8 9 0.2 -50 -25 10 VGS - Gate - Source Voltage (V) www.winsok.tw 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) Page 3 Dec.2014 WSR140N08 N-Ch MOSFET Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 200 2.4 100 IDS = 70A 2.0 o 1.8 IS - Source Current (A) Normalized On Resistance 2.2 VGS = 10V 1.6 1.4 1.2 1.0 0.8 10 o Tj=25 C 1 0.6 0.4 o RON@Tj=25 C: 4.8mΩ 0.2 -50 -25 0 25 50 0.1 0.0 75 100 125 150 175 0.4 0.6 0.8 1.2 1.0 1.4 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 Frequency=1MHz VDS= 64V 9 VGS - Gate-source Voltage (V) 10500 9000 7500 6000 Ciss 4500 3000 Coss 1500 0 8 16 24 32 8 7 6 5 4 3 2 0 40 VDS - Drain - Source Voltage (V) www.winsok.tw IDS= 70A 1 Crss 0 0.2 Tj - Junction Temperature (°C) 12000 C - Capacitance (pF) Tj=175 C 0 25 50 75 100 125 QG - Gate Charge (nC) Page 4 Dec.2014 WSR140N08 N-Ch MOSFET Typical Operating Characteristics (Cont.) Drain Current Power Dissipation 280 180 160 ID - Drain Current (A) Ptot - Power (W) 240 200 160 120 80 140 limited by package 120 100 80 60 40 20 40 o TC=25 C,VG=10V o TC=25 C 0 0 20 40 0 60 0 20 40 60 80 100 120 140 160 180 200 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area 100us on )L im it 100 ds ( 1ms R ID - Drain Current (A) 1000 10 10ms DC 1 o TC=25 C 0.1 0.01 0.1 1 10 100 300 VDS - Drain - Source Voltage (V) Thermal Transient Impedance 1 Normalized Effective Transient Duty = 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 0.001 Single Mounted on minimum pad o RθJA : 62.5 C/W 0.0001 0.0001 0.001 0.1 0.01 1 10 S uare Wave Pulse Duration sec www.winsok.tw Page 5 Dec.2014 WSR140N08 N-Ch MOSFET Package Information TO-220FB-3L SYMBOL A A1 A2 b b2 c D D1 DEP E E1 E2 e e1 H1 L L1 L2 P P1 Q θ1 θ2 θ3 www.winsok.tw MIN NOM MAX 4.40 4.57 4.70 1.27 1.30 1.33 2.35 2.40 2.50 0.77 0.80 0.90 1.17 1.27 1.36 0.48 0.50 0.56 15.40 15.60 15.80 9.00 9.10 9.20 0.05 0.10 0.20 9.80 10.00 10.20 8.70 9.80 10.00 10.20 2.54 BSC 5.08 BSC 6.40 6.50 6.60 12.75 13.50 13.65 3.10 3.30 2.50 REF 3.50 3.60 3.63 3.50 3.60 3.63 2.73 2.80 2.87 5° 7° 9° 1° 3° 5° 1° 3° 5° Page 6 MIN 0.173 0.050 0.093 0.030 0.046 0.019 0.606 0.354 0.002 0.386 0.386 0.252 0.502 0.138 0.138 0.107 5° 1° 1° NOM 0.180 0.051 0.094 0.031 0.050 0.020 0.614 0.358 0.004 0.394 0.343 0.394 0.100 0.200 0.256 0.531 0.122 0.098 0.142 0.142 0.110 7° 3° 3° MAX 0.185 0.052 0.098 0.035 0.054 0.022 0.622 0.362 0.008 0.402 0.402 BSC BSC 0.260 0.537 0.130 REF 0.143 0.143 0.113 9° 5° 5° Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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