WSR18P10

WSR18P10 P-Ch MOSFET General Description Product Summery The WSR18P10 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID -100V 80mΩ -25A Applications The WSR18P10 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z ESD:3KV z Advanced high cell density Trench technology TO-220 Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ID@Tc=25℃ ID@Tc=70℃ ±20 V 1 -25 A 1 -15 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V 2 IDM Pulsed Drain Current -80 A PD@Tc=25℃ Total Power Dissipation3 89 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 --- Max. 62 Unit ℃/W --- 1.4 ℃/W Dec.2014 WSR18P10 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit -100 --- --- V --- -0.0624 --- V/℃ --- 80 100 --- 100 115 -1.0 -1.5 -3.5 V --- 4.5 --- mV/℃ VDS=-80V , VGS=0V , TJ=25℃ --- --- 10 VDS=-80V , VGS=0V , TJ=55℃ --- --- 100 VGS=0V , ID=-250uA Reference to 25℃ , ID=-1mA VGS=-10V , ID=-1A VGS=-4.5V , ID=-0.5A VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-1A --- 23 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 16 32 Ω Qg Total Gate Charge (-10V) --- 50 --- Qgs Gate-Source Charge --- 7.5 --- Qgd Gate-Drain Charge --- 16.5 --- VDS=-50V , VGS=-10V , ID=-1A uA nC --- 12 --- Rise Time VDD=-50V , VGS=-10V , RG=3.3Ω --- 33 --- Turn-Off Delay Time ID=-0.5A --- 61 --- Fall Time --- 78 --- Ciss Input Capacitance --- 2580 --- Coss Output Capacitance --- 185 --- Crss Reverse Transfer Capacitance --- 140 --- Min. Typ. Max. Unit --- --- -25 A --- --- -80 A --- --- -1.3 V --- 53 --- nS --- 125 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-25V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-1A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t