WST2005

WST2005 P-Ch MOSFET General Description Product Summery The H is P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. are electrically identical. -RoHS Compliant BVDSS RDSON ID -20V 155mΩ -1.6A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z A Switch and Battery Switch for Portable Devices z Load Switch Features SOT-323 Pin Configuration z Advanced high cell density Trench technology D z Super Low Gate Charge 3 z Excellent Cdv/dt effect decline z Green Device Available 1 2 G S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±12 V -1.6 A -5 A ID@Tc=25℃ IDM 1 Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current 2 PD@TA=25℃ Total Power Dissipation 350 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ www.winsok.tw 3 Page 1 mW Dec.2014 WST2005 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS RDS(ON) Parameter Conditions Drain-Source Breakdown Voltage 2 Static Drain-Source On-Resistance Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V VGS=-4.5V , ID=-1A --- 145 155 VGS=-2.5V , ID=-0.5A --- 150 168 VGS=-1.8V , ID=-0.3A --- 180 220 -0.4 -0.7 -1 V mΩ Gate Threshold Voltage VGS=VDS , ID =-250uA IDSS Drain-Source Leakage Current VDS=-20V , VGS=0V , TJ=25℃ --- --- -1 uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-2A --- 5 --- S Qg Total Gate Charge (-4.5V) --- 4.9 -- Qgs Gate-Source Charge --- 0.62 -- Qgd Gate-Drain Charge --- 1.07 --- VGS(th) VDS=-6V , VGS=-4.5V , ID=-2.8A --- 10.1 Rise Time VDS=-6V , VGS=-4.5V , --- 4.76 -- Turn-Off Delay Time RGEN=6Ω, RL=6Ω, --- 84.1 -- Fall Time --- 25.2 Ciss Input Capacitance --- 472 -- Coss Output Capacitance --- 71 -- Crss Reverse Transfer Capacitance --- 51 -- Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-6V , VGS=0V , f=1MHz nC ns -pF Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t