WSF6012

WSF6012 N&P-Channel MOSFET Product Summery General Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF6012 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 60V 28mΩ 20A -60V 46mΩ -15A Applications z High Frequency Point-of-Load Synchronous Buck Converter. z Networking DC-DC Power System z Load Switch Features TO-252-4L Pin Configuration z Advanced high cell density Trench technology D1/D2 z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available G1 S1 Absolute Maximum Ratings S2 G2 Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage 1 1 ID@TC=25℃ ID@TC=70℃ IDM P-Channel Units 60 -60 V ±20 ±20 V 20 -15 A 15 -10 A 46 -36 A N-Channel Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy 200 180 mJ IAS Avalanche Current 59 -50 A Total Power Dissipation 34.7 34.7 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ Max. Unit --- 85 ℃/W --- 50 ℃/W PD@TC=25℃ 3 4 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw 1 Thermal Resistance Junction-Case Page 1 Dec.2014 WSF6012 N&P-Channel MOSFET N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.063 --- V/℃ VGS=10V , ID=8A --- 28 37 VGS=4.5V , ID=5A --- 37 45 1 --- --- -5.24 --- VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA VGS(th) Temperature Coefficient 2.5 mΩ V mV/℃ uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=8A --- 21 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.0 4.5 Ω Qg Total Gate Charge (4.5V) --- 12.6 20 Qgs Gate-Source Charge --- 3.5 --- Qgd Gate-Drain Charge --- 6.3 --- VDS=48V , VGS=4.5V , ID=8A nC --- 8 --- Rise Time VDD=30V , VGS=4.5V , --- 14.2 --- Turn-Off Delay Time RG=3.3Ω, ID=1A --- 24.6 --- Fall Time --- 4.6 --- Ciss Input Capacitance --- 670 --- Coss Output Capacitance --- 70 --- Crss Reverse Transfer Capacitance --- 35 --- Min. Typ. Max. Unit 100 --- --- mJ Min. Typ. Max. Unit --- --- 20 A --- --- 60 A --- --- 1.4 V Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=16A Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=1.7A,TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t