WSP4016

WSP4016 N-Channel MOSFET General Description Product Summery The WSP4016 is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications . BVDSS RDSON ID 40V 11.5mΩ 15.5A Applicatio The WSP4016 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. z White LED boost converters z Automotive Systems zIndustrial DC/DC Conversion Circuits Features SOP-8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 15.5 A ID@TC=70℃ 1 8.4 A 30 A IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 PD@TA=25℃ Total Power Dissipation TA=25°C 2.08 W PD@TA=70℃ Total Power Dissipation TA=70°C 1.3 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 Thermal Resistance Junction-Case 1 Typ. Max. Unit --- 60 ℃/W --- 20 ℃/W Notes Surface Mounted on 1” x 1” FR4 Board. a. Pulse width limited by maximum junction temperature b. www.winsok.tw Page 1 Dec.2014 WSP4016 N-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V VGS=10V , ID=7A --- 8.5 11.5 VGS=4.5V , ID=5A --- 11 14.5 VGS=VDS , ID =250uA 1.0 1.8 2.5 VDS=32V , VGS=0V , TJ=25℃ --- --- 1 VDS=32V , VGS=0V , TJ=55℃ --- --- 25 mΩ V uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=15A --- 31 --- S Qg Total Gate Charge (4.5V) --- 20 30 Qgs Gate-Source Charge --- 3.9 --- Qgd Gate-Drain Charge --- 3 --- --- 12.6 --- --- 10 --- --- 23.6 --- --- 6 --- --- 1125 --- --- 132 --- --- 70 --- Td(on) Tr Td(off) Tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=20V , VGS=10V , ID=7A VDD=20V,VGEN=10V, RG=1Ω, ID=1A, RL=20Ω. VDS=20V , VGS=0V , f=1MHz nC ns pF Note : 1. 2. Pulse test: PW