WSP4447

WSP4447 P-Ch MOSFET Product Summery General Description The WSP4447 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -40V 13mΩ -11A Applications The WSP4447 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features SOP-8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ -10V1 -11 A ID@TA=70℃ 1 -9.0 A IDM a Continuous Drain Current, VGS @ -10V 300µs Pulsed Drain Current (VGS=-10V) -44 A b Avalanche Energy, Single pulse (L=0.1mH) 54 mJ IAS b Avalanche Current, Single pulse (L=0.1mH) -33 A EAS PD@TA=25℃ Total Power Dissipation 2.0 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 4 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Max. Unit --- 75 ℃/W --- 24 ℃/W Dec.2014 WSP4447 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -40 --- --- V Reference to 25℃ , ID=-1mA --- -0.018 --- V/℃ VGS=-10V , ID=-13A --- 13 16 --- 18 26 -1.4 -1.9 -2.4 V --- 5.04 --- mV/℃ VDS=-32V , VGS=0V , TJ=25℃ --- --- -1 VDS=-32V , VGS=0V , TJ=55℃ --- --- -5 VGS=-4.5V , ID=-5A VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-10A --- 18 --- S Qg Total Gate Charge (-4.5V) --- 32 --- Qgs Gate-Source Charge --- 5.2 --- --- 8 --- Qgd VDS=-20V , VGS=-10V , ID=-11A Gate-Drain Charge uA nC --- 14 --- Rise Time VDD=-20V , VGS=-10V , --- 12 --- Turn-Off Delay Time RG=6Ω, ID=-1A ,RL=20Ω --- 41 --- Fall Time --- 22 --- Ciss Input Capacitance --- 1500 --- Coss Output Capacitance --- 235 --- Crss Reverse Transfer Capacitance --- 180 --- Min. Typ. Max. Unit --- --- -3.0 A --- --- -18 A --- --- -1.1 V --- 24 --- nS --- 18 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-11A,dI/dt=100A/µs,TJ=25℃ Note 1,Pulse test; pulse width£300ms, duty cycle£2%. 2, Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Dec.2014 WSP4447 P-Ch MOSFET Typical Operating Characteristics Power Dissipation Drain Current 3.5 12 3.0 10 -ID - Drain Current (A) Ptot - Power (W) 2.5 2.0 1.5 1.0 8 6 4 2 0.5 o o 0.0 T A=25 C 0 20 40 60 80 0 100 120 140 160 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 100 300ms 1ms 1 10ms 100ms 1s 0.1 DC o TA=25 C 0.01 0.01 0.1 1 10 Normalized Transient Thermal Resistance Rd s( on )L im it 2 10 -ID - Drain Current (A) TA=25 C,VG=-10V Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 300 -VDS - Drain - Source Voltage (V) www.winsok.tw 1 Mounted on 1in pad o RqJA : 40 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Page 3 Dec.2014 WSP4447 P-Ch MOSFET Typical Operating Characteristics (Cont.) Output Characteristics 50 Drain-Source On Resistance 32 VGS=-5,-6,-7,-8,-9,-10V -4V 28 RDS(ON) - On - Resistance (mW) -ID - Drain Current (A) 40 30 -3.5V 20 10 -3V 0 0.0 1.0 1.5 2.0 2.5 16 VGS=-10V 12 4 3.0 0 8 16 24 32 -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 40 IDS= -250mA IDS=-11A 1.4 Normalized Threshold Voltage 60 RDS(ON) - On Resistance (mW) 20 -VDS - Drain-Source Voltage (V) 70 50 40 30 20 10 0 VGS=-4.5V 8 -2.5V 0.5 24 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 -VGS - Gate - Source Voltage (V) www.winsok.tw 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Page 4 Dec.2014 WSP4447 P-Ch MOSFET Typical Operating Characteristics (Cont.) Output Characteristics 50 Drain-Source On Resistance 32 VGS=-5,-6,-7,-8,-9,-10V -4V 28 RDS(ON) - On - Resistance (mW) -ID - Drain Current (A) 40 30 -3.5V 20 10 -3V 0 0.0 1.0 1.5 2.0 2.5 16 VGS=-10V 12 4 3.0 0 8 16 24 32 -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 40 IDS= -250mA IDS=-11A 1.4 Normalized Threshold Voltage 60 RDS(ON) - On Resistance (mW) 20 -VDS - Drain-Source Voltage (V) 70 50 40 30 20 10 0 VGS=-4.5V 8 -2.5V 0.5 24 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 -VGS - Gate - Source Voltage (V) www.winsok.tw 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Page 5 Dec.2014 WSP4447 P-Ch MOSFET Package Information SOP-8 SEATING PLANE < 4 mils -TD E E1 SEE VIEW A h X 45 ° A A1 A2 c 0.25 b e GAUGE PLANE SEATING PLANE L VIEW A S Y M B O L A RECOMMENDED LAND PATTERN 1.27 SOP-8 MILLIMETERS MIN. INCHES MAX. MIN. MAX. 0.004 0.010 1.75 A1 0.10 A2 1.25 b 0.31 0.25 0.069 0.049 0.51 0.012 0.020 0.010 c 0.17 0.25 0.007 D 4.80 5.00 0.189 0.197 E E1 5.80 6.20 0.228 0.244 3.80 4.00 0.150 0.157 e 1.27 BSC 5.74 2.87 0.050 BSC h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 0 0° 8° 0° 8° Note: 1. Follow JEDEC MS-012 AA. 2. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension “E” does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. www.winsok.tw 2.2 Page 6 0.635 0.8 UNIT: mm Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedor containedhereininsuchapplications. 2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,  evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein. 3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalways evaluateandtestdevicesmountedinthecustomer’sproductsorequipment. 4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighͲqualityhighͲreliabilityproducts.However,anyandall semiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidents oreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetoother property.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Such measuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign, andstructuraldesign. 5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithout obtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. 6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofWinsokpowerSemiconductorCO.,LTD. 7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction. Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. 8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technology improvement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyou  Intendtouse. 9,thiscatalogprovidesinformationasofSep.2014. Specificationsandinformationhereinaresubjecttochangewithout notice.