WST3427

WST3427 P-Ch MOSFET Product Summery General Description The WST3427 is the highest performance trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID -20V 140mΩ -2.5A Applications The WST3427 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-23N Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@Tc=25℃ ID@Tc=70℃ IDM Rating Units Drain-Source Voltage -20 V Gate-Source Voltage ±12 V 1 -2.5 A 1 -1.9 A -9.1 A Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W Dec.2014 WST3427 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.016 --- V/℃ VGS=-4.5V , ID=-2A --- 140 165 VGS=-2.5V , ID=-1A --- 165 210 VGS=-1.8V , ID=-1.5A --- 210 240 -0.3 -0.65 -1.3 --- 3.97 --- VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ V △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-2A --- 5.9 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13.1 26.2 Ω Qg Total Gate Charge (-4.5V) --- 5.0 7.8 --- 0.62 1.0 Gate-Drain Charge --- 1.15 2.0 Turn-On Delay Time --- 3.5 8.0 Qgs Qgd Td(on) VDS=-15V , VGS=-4.5V , ID=-2A Gate-Source Charge mV/℃ uA nC Rise Time VDD=-15V , VGS=-4.5V , RG=3.3Ω --- 20.6 46 Turn-Off Delay Time ID=-2A --- 22 52 Fall Time --- 9.4 24.8 Ciss Input Capacitance --- 300 465 Coss Output Capacitance --- 45 67 Crss Reverse Transfer Capacitance --- 30 59 Min. Typ. Max. Unit --- --- -2.5 A Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS Parameter Conditions 1,4 Continuous Source Current 2,4 ISM Pulsed Source Current VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-2A , dI/dt=100A/µs , TJ=25℃ --- --- -8 A --- --- -1.2 V --- 20 --- nS --- 4.5 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t