WSF07N10

WSF07N10 N-Ch MOSFET Product Summery General Description The WSF07N10 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 100V 195mΩ 7A Applications The WSF07N10 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System z Load Switch Features TO-252 Pin Configuration z Advanced high cell density Trench technology D z Super Low Gate Charge z Excellent Cdv/dt effect decline G z Green Device Available S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage 100 V Gate-Source Voltage ±20 V 1 7 A 1 4 A 21 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1.25 W TSTG Storage Temperature Range -55 to 170 ℃ TJ Operating Junction Temperature Range -55 to 170 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Max. Unit --- 70 ℃/W --- 2.5 ℃/W Typ. Thermal Resistance Junction-Case Page 1 1 Dec.2017 WSF07N10 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=1A --- 195 250 mΩ --- 240 320 mΩ 1.5 2.0 3.0 V --- -4.57 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 5 VGS=0V , ID=250uA VGS=6V , ID=1A VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=5A --- 1 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 4 Ω --- 5.2 --- --- 0.75 --- Gate-Drain Charge --- 1.4 --- Turn-On Delay Time --- 6 --- Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Td(on) VDS=50V , VGS=10V , ID=1.3A uA nC Rise Time VDD=30V , VGS=10V , RG=6Ω --- 10 --- Turn-Off Delay Time ID=1A , RL=30Ω --- 10 --- Fall Time --- 6 --- Ciss Input Capacitance --- 320 --- Coss Output Capacitance --- 22 --- Crss Reverse Transfer Capacitance --- 13 --- Min. Typ. Max. Unit A V Tr Td(off) Tf VDS=30V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Conditions 1,6 Continuous Source Current 2 Diode Forward Voltage VG=VD=0V , Force Current --- --- 3 VGS=0V , IS=3A , TJ=25℃ --- --- 1.2 Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production www.winsok.tw Page 2 Dec.2017 WSF07N10 N-Ch MOSFET ID- Drain Current (A) Normalized On-Resistance Typical Characteristics TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(Ω) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current www.winsok.tw Figure 6 Source- Drain Diode Forward Page 3 Dec.2017 WSF07N10 N-Ch MOSFET C Capacitance (nF) Typical Characteristics TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature ID- Drain Current (A) Power Dissipation (w) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 Power De-ratin r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.winsok.tw Page 4 Dec.2017 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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