WSF15N10A

WSF15N10A N-Ch MOSFET Product Summery General Description The WSF15N10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It BVDSS RDSON ID 100V 90mΩ 15A can be used in a wide variety of applications. Features ● High density cell design for ultra low Rdson TO-252 Pin Configuration ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ±20 V 1 15 A 1 7 A 40 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 2 IDM PD@TC=25℃ Pulsed Drain Current Maximum Power Dissipation 40 W 0.27 W/℃ Single Pulse Avalanche Energy 20 mJ Operating Junction Temperature Range -55 to 170 ℃ Derating factor 3 EAS TJ TSTG Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 50 ℃/W --- 3.8 ℃/W Dec.2014 WSF15N10A N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage = VGS=0V , ID 250uA △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Reference to 25℃ , ID=1mA Static Drain-Source On-Resistance2 = VGS=10V , ID 5A Min. Typ. Max. Unit 100 --- --- V --- 0.098 --- V/℃ --- 90 110 mΩ 150 mΩ --- 110 Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.5 2.5 IDSS IGSS Drain-Source Leakage Current Gate-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 V nA VGS=±20V , VDS=0V --- --- ±100 uA gfs Forward Transconductance 3.5 --- --- S VGS(th) = VDS=5V , ID 5A --- 21.5 --- --- 3.2 --- Gate-Drain Charge --- 6.0 --- Turn-On Delay Time --- 11 24 Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Td(on) = VGS=4.5V , ID 2A VDS=50V , VGS=10V , ID=5A nC Rise Time VDD=30V , VGS=10V , RG=6Ω --- 7.4 15 Turn-Off Delay Time ID=1A , RL=30Ω --- 35 45 Fall Time --- 9.1 12 Ciss Input Capacitance --- 730 --- Coss Output Capacitance --- 37 --- Crss Reverse Transfer Capacitance --- 27 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 10 A VGS=0V , IS=10A , TJ=25℃ --- --- 1.2 V 17 21 61 nS 61 97 113 nC Tr Td(off) Tf VDS=30V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS Parameter Continuous Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions IF=10A , dI/dt=100A/µs , TJ=25℃ Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25 www.winsok.tw Page 2 Dec.2014 WSF15N10A N-Ch MOSFET ID- Drain Current (A) Normalized On-Resistance Typical Characteristics TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Figure 3 Rdson- Drain Current www.winsok.tw Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward Page 3 Dec.2014 WSF15N10A C Capacitance (pF) Power Dissipation (W) N-Ch MOSFET TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 Power De-rating ID- Drain Current (A) ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 Current De-rating r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.winsok.tw Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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