WSP14N10

WSP14N10 N-Ch MOSFET General Description Product Summery The WSP14N10 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 100V 16mΩ 14A Applications The WSP14N10 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Load switch Battery protection Uninterruptible power supply SOP-8 Pin Configuration Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V 1 ID@TC=25℃ Continuous Drain Current, VGS @ 10V 14 A IDM Pulsed Drain Current2 42 A 30 mJ EAS 3 Single Pulse Avalanche Energy L=0.1mH PD@TA=25℃ Total Power Dissipation 72 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 4 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 40 ℃/W --- 24 ℃/W Dec.2014 WSP14N10 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 100 --- --- V --- 0.098 --- V/℃ --- 16 20 --- 25 28 1.0 1.5 2.5 V --- -5.52 --- mV/℃ VDS=100V , VGS=0V , TJ=25℃ --- --- 1 VDS=100V , VGS=0V , TJ=55℃ --- --- 5 VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=8A VGS=4.5V , ID=6A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 0.55 1.0 Ω Qg Total Gate Charge (10V) --- 19.8 --- Qgs Gate-Source Charge --- 2.4 --- Qgd Gate-Drain Charge --- 5.3 --- --- 17.8 --- --- 3.9 --- --- 33.5 --- Fall Time --- 3.2 --- Ciss Input Capacitance --- 1191 --- Coss Output Capacitance --- 195 --- Crss Reverse Transfer Capacitance --- 41 --- Min. Typ. Max. Unit A V Td(on) Tr Td(off) Tf VDS=50V , VGS=10V , ID=8A Turn-On Delay Time Rise Time VDD=50V , VGS=10V , Turn-Off Delay Time RG=2.2Ω ID=10A VDS=50V , VGS=0V , f=1MHz uA nC ns pF Diode Characteristics Symbol IS VSD Parameter Conditions 1,6 Continuous Source Current 2 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current --- --- 40 VGS=0V , IS=8A , TJ=25℃ --- --- 1.3 --- 50 --- nS --- 95 --- nC IF=8A , dI/dt=100A/µs , T J=25℃ Note 1) 2) Calculated continuous current based on maximum allowable junction temperature. Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. 5) VDD=50 V, RG=25 Ω, L=0.3 mH, starting Tj=25 ℃. www.winsok.tw Page 2 Dec.2014 WSP14N10 N-Ch MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS DS Figure 3, Typ. capacitances Figure 4, Typ. gate charge Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance www.winsok.tw Page 3 Dec.2014 WSP14N10 N-Ch MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS www.winsok.tw Page 4 Dec.2014 WSP14N10 N-Ch MOSFET SOP-8 package www.winsok.tw Page 5 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedor containedhereininsuchapplications. 2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,  evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein. 3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalways evaluateandtestdevicesmountedinthecustomer’sproductsorequipment. 4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighͲqualityhighͲreliabilityproducts.However,anyandall semiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidents oreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetoother property.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Such measuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign, andstructuraldesign. 5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithout obtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. 6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofWinsokpowerSemiconductorCO.,LTD. 7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction. Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. 8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technology improvement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyou  Intendtouse. 9,thiscatalogprovidesinformationasofSep.2014. Specificationsandinformationhereinaresubjecttochangewithout notice.