WSP6024

WSP6024 N-Channel MOSFET General Description Product Summery The WSP6024 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 60V 8mΩ 15A Applications The WSP6024meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features SOP-8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS VGS Drain-Source Voltage 60 V Gate-Source Voltage ±20 V 1 15 A 1 9.6 A 43 A Single Pulse Avalanche Energy 81 mJ Avalanche Current 16 A Total Power Dissipation 1.78 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range 150 ℃ ID@TC=25℃ ID@TC=70℃ IDM a EASb IAS b PD@TA=25℃ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 4 Thermal Data Symbol c Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 1 Thermal Resistance Junction-Case Max. Unit --- 72 ℃/W --- 1.2 ℃/W Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC). Note c：Surface Mounted on 1in2 pad area. www.winsok.tw Page 1 Dec.2014 WSP6024 N-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.044 --- V/℃ VGS=10V , ID=13A --- 8 10 --- 11 13.7 1.0 2.0 3.0 V --- -4.6 --- mV/℃ VDS=60V , VGS=0V , TJ=25℃ --- --- 1 VDS=60V , VGS=0V , TJ=55℃ --- --- 100 VGS=±20V , VDS=0V --- --- ±100 --- 25.4 --- --- 4.6 --- VGS=4.5V , ID=8A VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 3.8 --- Turn-On Delay Time --- 15 --- Td(on) Tr Td(off) VDS=30V , VGS=10V , ID=6A Rise Time VDD=30V , VGEN=10V , --- 7 --- Turn-Off Delay Time RG=6Ω ID=1A ,RL=30Ω --- 34 --- mΩ uA nA nC ns Fall Time --- 30 --- Ciss Input Capacitance --- 1500 --- Coss Output Capacitance --- 280 --- Crss Reverse Transfer Capacitance --- 40 --- Min. Typ. Max. Unit --- --- 1.3 V --- 30 --- nS --- 29 --- nC Tf VDS=30V , VGS=0V , f=1MHz pF Diode Characteristics Parameter Symbol 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VGS=0V , IS=1A , TJ=25℃ IF=6.0A , dI/dt=100A/µs , TJ=25℃ Note d：Pulse test ; pulse width≤300ms, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Dec.2014 WSP6024 N-Channel MOSFET Typical Characteristics Power Dissipation Drain Current 2.0 15 12.5 ID - Drain Current (A) 1.2 0.8 0.4 10 7.5 5.0 2.5 TA=25oC 0 20 40 60 0 80 100 120 140 160 TA=25oC,VG=10V 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) 0.0 Normalized Transient Thermal Resistance Ptot - Power (W) 1.6 VDS - Drain - Source Voltage (V) 2 Duty = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 1E-3 1E-4 1E-3 0.01 0.1 Mounted on 1in2 pad RqJA : 70oC/W 1 10 100 1000 Square Wave Pulse Duration (sec) Fig5. Typical Source-Drain Diode Forward Voltage www.winsok.tw Page 3 Dec.2014 WSP6024 N-Channel MOSFET Output Characteristics 40 Drain-Source On Resistance 13 VGS=4,5,6,7,8,9,10V 35 12 RDS(ON) - On - Resistance (mΩ) 3.5V ID - Drain Current (A) 30 25 20 15 10 3V 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS=10V 8 7 6 5 0 8 16 24 32 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 IDS=6A 30 Normalized Threshold Voltage RDS(ON) - On - Resistance (mΩ) 9 4 3.0 VGS=4.5V 10 VDS - Drain - Source Voltage (V) 35 25 20 15 10 5 0 11 2 3 4 5 6 7 8 9 10 VGS - Gate - Source Voltage (V) www.winsok.tw 40 IDS =250mA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Page 4 Dec.2014 WSP6024 N-Channel MOSFET Drain-Source On Resistance 2.0 IS - Source Current (A) 1.6 1.4 1.2 1.0 0.8 0.6 RON@Tj=25oC: 7mW 0.4 -50 -25 0 25 50 Tj=150oC Tj=25oC 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 2000 10 Frequency=1MHz 1800 VDS=30V IDS=6A 9 1600 C - Capacitance (pF) 10 0.1 0.0 75 100 125 150 VGS - Gate-source Voltage (V) Normalized On Resistance 40 VGS = 10V IDS = 6A 1.8 Ciss 1400 1200 1000 800 600 Coss 400 Crss 200 0 Source-Drain Diode Forward 0 10 20 30 40 7 6 5 4 3 2 1 0 50 VDS - Drain-Source Voltage (V) www.winsok.tw 8 0 4 8 12 16 20 24 28 QG - Gate Charge (nC) Page 5 Dec.2014 WSP6024 N-Channel MOSFET Transfer Characteristics 40 ID - Drain Current (A) 32 24 Tj=25oC 16 Tj=125oC 8 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VGS - Gate-Source Voltage (V) www.winsok.tw Page 6 Dec.2014 WSP6024 N-Channel MOSFET SOP8 Package Outline Data DIMENSIONS ( unit : mm ) Symbol Min Typ Max Symbol Min Typ Max A -- 1.75 -- A1 0.10 0.18 0.25 A2 1.25 1.35 1.45 A3 -- 0.25 -- bp 0.36 0.42 0.49 c 0.19 0.22 0.25 D 4.80 4.92 5.00 E 3.80 3.90 4.00 e -- 1.27 -- HE 5.80 5.98 6.20 L -- 1.05 -- Lp 0.40 0.68 1.00 Q 0.60 0.65 0.70 v -- 0.25 -- w -- 0.25 -- y -- 0.10 -- Z 0.30 0.50 0.70 θ 0° www.winsok.tw Page 7 8° Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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