WSR80N06

WSR80N06 N-Ch MOSFET General Description Product Summery The WSR80N06 uses advanced trench technology and design to provide excellent RDS(ON) BVDSS RDSON ID 60V 9.1mΩ 80A with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Features ● High density cell design for ultra low Rdson TO-220AB Pin Configuration ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS D ● Excellent package for good heat dissipation ● Special process technology for high ESD capability D S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS PD@TC=25℃ TJ TSTG Rating Units Drain-Source Voltage 60 V Gate-Source Voltage ±20 V 80 A 1 Continuous Drain Current, VGS @ 10V 1 50 A 300 A 450 mJ Total Power Dissipation 110 W Operating Junction Temperature Range -55 to 175 ℃ Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 Single Pulse Avalanche Energy 4 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Max. Unit --- 62 ℃/W --- 0.57 ℃/W Dec.2014 WSR80N06 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage = VGS=0V , ID 250uA △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Qg Total Gate Charge (4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Tr Td(off) Tf Ciss Reference to 25℃ , ID=1mA 2 = VGS=10V , ID 30A VGS=VDS , ID =250uA Min. Typ. Max. Unit 60 --- --- V --- 0.057 --- V/℃ --- 9.1 11.5 2.0 3.0 4.0 V --- -5.68 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 VGS=±20V , VDS=0V --- --- ±100 nA 20 --- --- S --- 36 45 --- 9.9 18 --- 6.6 15 --- 16 --- 10 21 Turn-Off Delay Time --- 45 65 Fall Time --- 12 22 --- 2350 --- --- 237 --- --- 205 --- Min. Typ. Max. Unit --- --- 80 A --- --- 1.2 V = VDS=5V , ID 15A VDS=30V , VGS=4.5V , ID=30A Turn-On Delay Time VDS=30V , VGS=10V , ID=2A ， R=1Ω. Rise Time Input Capacitance VDS=25V , VGS=0V , f=1MHz Coss Output Capacitance Crss Reverse Transfer Capacitance uA nC 28 ns pF Diode Characteristics Symbol IS Parameter Conditions 1,6 Continuous Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=80A ,dI/dt=100A/µs,TJ=25℃ --- 28 --- nS --- 49 --- nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω www.winsok.tw Page 2 Dec.2014 WSR80N06 N-Ch MOSFET Typical Characteristics ℃) TJ-Junction Temperatu(re Vds Drain-Source Voltage (V) Figure 1 Output Characteristics Figure 4 Rdson-JunctionTemperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge ID- Drain Current (A) Figure 3 RdsonD - rain Current www.winsok.tw Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward Page 3 Dec.2014 WSR80N06 N-Ch MOSFET TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.winsok.tw Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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