WST2004

WST2004 N-Ch MOSFET Features Product Summery BVDSS RDSON (TYP.) z Lead Free Product is Acquired z Surface Mount Package z N-Channel Switch with Low RDS(on) 20V 240mΩ 20V 280mΩ z Operated at Low Logic Level Gate Drive 20V 410mΩ 20V 450mΩ ID (MAX) 0.6A SOT-723 Pin Configuration Applications D 3 z Load/Power Switching z Interfacing Switching z Battery Management for Ultra Small Portable Electronics z Logic Level Shift 1 2 G S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 V 400 mA 1.2 A Total Power Dissipation 0.150 W ℃/W ID@TA=25℃ IDM PD@TA=25℃ RθJA 1 Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 Thermal Resistance from Junction to Ambient (note 1) 823 TJ Junction Temperature 150 ℃ TSTG Storage Temperature Range -55 to 150 ℃ TL Lead Temperature for Soldering Purposes(1/8” from case for 10 s) 260 ℃ www.winsok.tw Page 1 Dec.2014 WST2004 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.05 --- V/℃ VGS=4.5V , ID=0.4A --- 240 450 VGS=2.5V , ID=0.3A --- 280 765 VGS=1.8V , ID=0.2A --- 410 850 VGS=1.5V , ID=0.1A --- 450 950 0.35 --- 1.0 V --- -3.7 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 ±10 VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- gfs Forward Transconductance VDS=5V , ID=0.1A --- 1.5 ----- mΩ mΩ uA uA S --- 5.8 Rise Time VDD=15V , VGS=10V , --- 2.9 --- Turn-Off Delay Time RG=6Ω, ID=0.1A --- 18 --- Fall Time --- 9 --- Ciss Input Capacitance --- 88 --- Coss Output Capacitance --- 15 --- Crss Reverse Transfer Capacitance --- 10 --- Min. Typ. Max. Unit --- --- 100 mA --- --- 0.5 A --- --- 1.2 V Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,4 Continuous Source Current 2,4 Pulsed Source Current 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=0.2A , TJ=25℃ Notes : 1.. Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse Width=300µs, Duty Cycle=2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Guaranteed by design, not subject to producting. www.winsok.tw Page 2 Dec.2014 WST2004 N-Ch MOSFET Typical Performance Characteristics Output Characteristics Transfer Characteristics 5.0 4.5 4.0 VGS=4V,5V Ta=25℃ VDS=3V VGS=3V 3.5 VGS=2.5V 3.0 Pulsed Pulsed (A) ID 3.5 3.0 DRAIN CURRENT DRAIN CURRENT ID (A) 4.0 VGS=2V 2.5 2.0 1.5 Ta=25℃ 2.5 Ta=100℃ 2.0 1.5 1.0 VGS=1.5V 1.0 0.5 0.5 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DRAIN TO SOURCE VOLTAGE 4.0 VDS 4.5 5.0 0 (V) 1 2 GATE TO SOURCE VOLTAGE 3 VGS 4 (V) RDS(ON) —— VGS RDS(ON) —— ID 500 800 Ta=25℃ Pulsed Pulsed 700 (m) 400 350 VGS=2.5V 300 VGS=4.5V 500 250 200 0.1 ID=0.65A 600 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) VGS=1.8V RDS(ON) 450 Ta=100℃ 400 300 Ta=25℃ 200 100 0.2 0.3 0.4 0.5 0.6 0.7 DRAIN CURRENT 0.8 ID 0.9 1.0 1.1 1.2 1 (A) 2 3 4 GATE TO SOURCE VOLTAGE GS 5 (V) Threshold Voltage IS —— VSD 2 0.8 Pulsed 1 VTH Ta=100℃ 0.1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 0.7 Ta=25℃ 0.6 ID=250uA 0.5 0.4 0.3 0.01 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLT VOLTAGE A www.winsok.tw 1.2 SD 1.4 1.6 0.2 25 (V) 50 75 JUNCTION TEMPERATURE Page 3 100 Tj 125 (℃ ) Dec.2014 WST2004 N-Ch MOSFET SOT-723 Package Outline Dimensions Symbol A A1 b b1 c D E E1 e θ Dimensions In Millimeters Min. Max. 0.430 0.500 0.000 0.050 0.170 0.270 0.270 0.370 0.080 0.150 1.150 1.250 1.150 1.250 0.750 0.850 0.800TYP. 7° REF. Dimensions In Inches Min. Max. 0.017 0.020 0.000 0.002 0.007 0.011 0.011 0.015 0.003 0.006 0.045 0.049 0.045 0.049 0.030 0.033 0.031TYP. 7° REF. SOT-723 Suggested Pad Layout www.winsok.tw Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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