WST2026

WST2026 N-Channel MOSFET General Description Product Summery The WST2026 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 20V 65mΩ 2.0A Applications The WST2026 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-323 Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V 1 2.0 A 1 1.0 A 16 A Total Power Dissipation 0.4 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ ID@TC=25℃ ID@TC=70℃ IDM PD@TA=25℃ Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 3 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw 1 Thermal Resistance Junction-Case Page 1 Max. Unit --- 125 ℃/W --- 85 ℃/W Dec.2014 WST2026 N-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.022 --- V/℃ VGS=10V , ID=2A --- 65 85 VGS=4.5V , ID=1A --- 80 100 0.5 0.8 1.5 V --- -2.33 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=2A --- 15 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.5 3 Ω --- 7.6 10 --- 1.3 2.0 --- 1.7 3.8 --- 11 22 --- 3.2 6.5 --- 22 45 --- 3.0 6.0 --- 391 --- --- 87 --- --- 60 --- Min. Typ. Max. Unit --- --- 2.0 A --- --- 15 A --- --- 1.0 V --- 11 25 nS --- 6.8 14 nC Qg Total Gate Charge (4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Tr Td(off) Tf VDS=15V , VGS=4.5V , ID=2A Turn-On Delay Time VDD=10V , Rise Time VGS=4.5V , RG=6.0Ω Turn-Off Delay Time ID=2A Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz uA nC ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current1,4 2,4 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=2A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t