WST3052

WST3052 N-Ch MOSFET Product Summery General Description The WST3052 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 30V 60mΩ 2.5A Applications The WST3052 meet the RoHS and Green Product requirement with full function reliability approved. z Power Management in Notebook Computer Portable Equipment and Battery Powered Systems. Features z Advanced high cell density Trench technology SOT-323 Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±12 V 1 2.5 A 1 2.0 A ID@Tc=25℃ ID@Tc=70℃ IDM PD@TA=25℃ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 13 A 3 0.7 W 3 2 Total Power Dissipation PD@TA=70℃ Total Power Dissipation 0.45 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJA RθJC www.winsok.tw Parameter Typ. Thermal Resistance Junction-ambient 1 1 Thermal Resistance Junction-Ambient (t ≤10s) 1 Thermal Resistance Junction-Case Page 1 --- Max. 180 Unit ℃/W --- 120 ℃/W --- 100 ℃/W Oct.2018 WST3052 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage VGS(th) Temperature Coefficient Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.025 --- V/℃ --- 50 60 --- 60 70 0.5 0.7 1.0 V --- -4.8 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 30 VGS=4.5V , ID=2.5A VGS=2.5V , ID=2A VGS=VDS , ID =250uA mΩ uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=2A --- 7 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 5 Ω Qg Total Gate Charge (4.5V) --- 4.0 8.4 Qgs Gate-Source Charge --- 0.3 3.5 Qgd Gate-Drain Charge --- 1.5 2.9 VDS=10V , VGS=4.5V , ID=1A nC --- 3.5 5.2 Rise Time VDD=10V , VGS=10V , RG=6Ω, --- 13.3 21 Turn-Off Delay Time ID=1A, RL=10Ω. --- 13.2 20 Fall Time --- 2 5 Ciss Input Capacitance --- 286 --- Coss Output Capacitance --- 60 --- Crss Reverse Transfer Capacitance --- 50 --- Min. Typ. Max. Unit --- --- 2.5 A --- --- 13 A --- --- 1.0 V --- 15 --- nS --- 3.7 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=10V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=5A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t