WST4045

WST4045 P-Ch MOSFET Product Summery General Description The WST4045 is the highest performance trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -40V 73mΩ -4.3A Applications The WST4045 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter. z Networking DC-DC Power System z Load Switch Features SOT-23-3L Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V -4.3 A IDP Pulsed Drain Current -20 A PD Total Power Dissipation 2.0 W -55 to 150 ℃ TJ,TSTG Operating Junction and Storage Temperature Range Thermal Data Symbol RθJA www.winsok.tw Parameter Thermal Resistance Junction-Ambient Page 1 Typ. Max. Unit --- 125 ℃/W Dec.2014 WST4045 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage VGS(th) Temperature Coefficient Min. Typ. Max. Unit VGS=0V , ID=-250uA -40 --- --- V Reference to 25℃ , ID=-1mA --- -0.03 --- V/℃ VGS=-10V , ID=-3A --- 73 85 VGS=-4.5V , ID=-1A --- 98 126 -1.0 -1.5 -3.0 V --- 4.56 --- mV/℃ VDS=-28V , VGS=0V , TJ=25℃ --- --- 1 VDS=-28V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA mΩ uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 10 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.8 --- Ω Qg Total Gate Charge (-4.5V) --- 14 --- Qgs Gate-Source Charge --- 2.9 --- Qgd Gate-Drain Charge --- 3.8 ----- VDS=-20V , VGS=-10V , ID=-3.1A nC --- 9 Rise Time VDD=-20V , VGS=-10V , --- 8 --- Turn-Off Delay Time RG=3Ω, RL=2Ω --- 28 --- Fall Time --- 10 --- Ciss Input Capacitance --- 650 --- Coss Output Capacitance --- 90 --- Crss Reverse Transfer Capacitance --- 70 --- Min. Typ. Unit --- --- Max. -4.3 --- --- -1.2 V Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-20V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Conditions 1,6 Continuous Source Current 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=-2.5A A Note : 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production www.winsok.tw Page 2 Dec.2014 WST4045 P-Ch MOSFET PD Power(W) ID- Drain Current (A） Typical Electrical and Thermal Characteristics TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 6 Drain-Source On-Resistance Figure 5 Output Characteristics www.winsok.tw Page 3 Dec.2014 WST4045 ID- Drain Current (A) Normalized On-Resistance P-Ch MOSFET TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(Ω) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Vsd Source-Drain Voltage (V) Qg Gate Charge (nC) Figure 11 Gate Charge www.winsok.tw Figure 12 Source- Drain Diode Forward Page 4 Dec.2014 WST4045 ID- Drain Current (A) P-Ch MOSFET Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.winsok.tw Page 5 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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