WST6045

WST6045 N-Ch MOSFET General Description Product Summery The WST6045 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 60V 40mΩ 5.0A Applications The WST6045 meet the RoHS and Green Product requirement with full function reliability approved. z Power management in portable and battery operated products z One cell battery pack protection Features SOT-23-6L Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge (1,2,5,6) DD DD z Excellent Cdv/dt effect decline S D z Green Device Available D G D D (3)G (4)S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=70℃ IDM Rating Units Drain-Source Voltage 60 V Gate-Source Voltage ±20 V 1 5.0 A 1 4.0 A 20 A Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1.6 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw 1 Thermal Resistance Junction-Case Page 1 --- Max. 110 Unit ℃/W --- 80 ℃/W Dec.2014 WST6045 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.028 --- V/℃ VGS=10V , ID=4.0A --- 40 50 VGS=4.5V , ID=3.0A --- 45 65 1.0 2.0 3.0 V --- -3.21 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 VGS=±20V , VDS=0V --- --- ±100 nA --- 12 --- S --- 4 --- Ω --- 11.5 --- --- 2.3 --- VGS=VDS , ID =250uA VDS=5V , ID=5A Rg Gate Resistance Qg Total Gate Charge (4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 2.2 --- Turn-On Delay Time --- 10 --- Td(on) Tr Td(off) Tf Ciss Coss Crss VDS=0V , VGS=0V , f=1MHz VDS=15V , VGS=10V , ID=3.5A mΩ uA nC Rise Time VDD=15V , VGEN=10V , RG=3Ω --- 6 --- Turn-Off Delay Time ID=1.0A ,RL=4.2Ω. --- 21 --- Fall Time --- 5 --- Input Capacitance --- 540 --- --- 56 --- --- 26 --- Min. Typ. Max. Unit --- --- 3.0 A --- --- 15 A --- --- 1.3 V --- 20 --- nS --- 20 --- nC VDS=15V , VGS=0V , f=1MHz Output Capacitance Reverse Transfer Capacitance ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,4 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,4 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , ISD=3.5A , TJ=25℃ IF=3.5A,dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WST6045 N-Ch MOSFET Typical Characteristics Drain Current 3.0 6 2.5 5 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 2.0 1.5 1.0 4 3 2 1 0.5 o o 0.0 T A=25 C 0 20 40 60 80 0 100 120 140 160 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 50 im )L (o n Rd s 300µs 1 1ms 10ms 100ms 0.1 1s DC o TA=25 C 0.01 0.01 0.1 1 10 100 300 Normalized Transient Thermal Resistance it 3 10 ID - Drain Current (A) TA=25 C,VG=10V 0.2 0.1 0.05 0.02 0.1 0.01 Single Pulse 0.01 2 0.002 1E-4 VDS - Drain - Source Voltage (V) www.winsok.tw Duty = 0.5 1 Mounted on 1in pad o RθJA : 50 C/W 1E-3 0.01 0.1 1 10 60 Square Wave Pulse Duration (sec) Page 3 Dec.2014 WST6045 N-Ch MOSFET Typical Characteristics Output Characteristics Drain-Source On Resistance 20 80 ID - Drain Current (A) VGS=3.5,4,5,6,7,8,9,10V 12 8 3V 4 RDS(ON) - On - Resistance (mΩ) 70 16 60 VGS=4.5V 50 40 VGS=10V 30 20 0 0.0 2.5V 0.5 1.0 1.5 2.5 2.0 10 3.0 0 4 8 12 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 90 80 IDS =250µA Normalized T hreshold Voltage RDS(ON) - On Resistance (mΩ) 20 1.6 IDS=4A 70 60 50 40 30 16 2 3 4 5 6 7 8 9 1.2 1.0 0.8 0.6 0.4 -50 -25 10 VGS - Gate - Source Voltage (V) www.winsok.tw 1.4 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Page 4 Dec.2014 WST6045 N-Ch MOSFET Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward 2.5 20 VGS = 10V 10 2.0 IS - Source Current (A) Normalized On Resistance IDS = 4A 1.5 1.0 o Tj=150 C o Tj=25 C 1 0.5 o RON@Tj=25 C: 40mΩ 0.0 -50 -25 0 25 50 75 0.1 0.0 100 125 150 1.2 VGS - Gate - source Voltage (V) Ciss 500 400 300 200 Coss Crss 8 16 1.4 10 600 C - Capacitance (pF) 1.0 Gate Charge VDS =30V 9 IDS =5A 8 7 6 5 4 3 2 1 24 32 0 40 VDS - Drain - Source Voltage (V) www.winsok.tw 0.8 Capacitance 700 0 0.6 VSD - Source - Drain Voltage (V) Frequency=1MHz 0 0.4 Tj - Junction Temperature (°C) 800 100 0.2 0 2 4 6 8 10 12 QG - Gate Charge (nC) Page 5 Dec.2014 WST6045 N-Ch MOSFET Package Information SOT-23-6L D e E E1 SEE VIEW A b c 0.25 A A2 e1 L 0 A1 GAUGE PLANE SEATING PLANE VIEW A S Y M B O L A RECOMMENDED LAND PATTERN SOT-23-6L MILLIMETERS INCHES MIN. MAX. - 0.63 MIN. MAX. 1.25 - 0.049 0.002 A1 0.00 0.05 0.000 A2 0.90 1.20 0.035 0.047 b 0.30 0.50 0.012 0.020 c 0.08 0.22 0.003 0.009 0.106 0.122 D 2.70 3.10 E 2.60 3.00 0.102 0.118 E1 1.40 1.80 0.055 0.071 e 0.95 BSC e1 2.4 0.8 0.037 BSC 1.90 BSC 0.075 BSC L 0.30 0.60 0 0° 8° 0.012 0° 0.024 8° 0.95 UNIT: mm Note : 1. Follow JEDEC TO-178 AB. 2. Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side. www.winsok.tw Page 6 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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