WSD20L50DN

WSD20L50DN P-Ch MOSFET General Description Product Summery The WSD20L50DN is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -20V 9.0mΩ -50A Applications The WSD20L50DN meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology DFN3.3x3.3A-8_EP Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ 10s Steady State Units -20 V ±12 V 1 -50 A 1 -22 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V 1 -13.5 1 -10.5 Continuous Drain Current, VGS @ -10V ID@TA=70℃ Continuous Drain Current, VGS @ -10V IDM Pulsed Drain Current2 3 -10 A -8.0 A -70 A EAS Single Pulse Avalanche Energy 36 mJ IAS Avalanche Current -12 A 31.25 W PD@TC=25℃ 4 Total Power Dissipation 4 3.1 2.0 PD@TA=25℃ Total Power Dissipation W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 80 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 40 ℃/W --- 4.0 ℃/W RθJC www.winsok.tw Typ. 1 Thermal Resistance Junction-Case Page 1 Dec.2014 WSD20L50DN P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.0232 --- V/℃ VGS=-4.5V , ID=-10A VGS=-2.5V , ID=-8A --- 9 11 --- 11 15 -0.5 --- mΩ -1.0 V --- 4.6 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-10A --- 13 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 9 --- Ω Qg Total Gate Charge (-4.5V) --- 25 --- --- 1.6 --- --- 11 --- △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Qgs Gate-Source Charge Qgd Gate-Drain Charge VGS=VDS , ID =-250uA VDS=-10V , VGS=-4.5V , ID=-11A uA nC --- 9 --- Rise Time VDD=-10V , VGS=-4.5V , --- 13 --- Turn-Off Delay Time RG=6Ω ID=-1A ,RL=15Ω --- 26 --- Fall Time --- 167 --- Ciss Input Capacitance --- 1620 --- Coss Output Capacitance --- 320 --- Crss Reverse Transfer Capacitance --- 290 --- Min. Typ. Max. Unit --- --- -10 A --- -40 A Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-10V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current --- VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V IF=-20A,dI/dt=100A/µs, TJ=25℃ --- 63 --- nS --- 54 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.5mH,IAS=-18A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WSD20L50DN P-Ch MOSFET Typical Characteristics Power Dissipation Drain Current 35 56 30 49 42 -ID - Drain Current (A) Ptot - Power (W) 25 20 15 10 5 35 28 21 14 7 o 0 o TC=25 C 0 20 40 60 80 0 100 120 140 160 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 3 Rd s(o n) Lim it Normalized Transient Thermal Resistance 100 -ID - Drain Current (A) TC=25 C,V G=-4.5V 10 1ms 10ms DC o TC=25 C 1 0.1 1 10 50 -VDS - Drain - Source Voltage (V) www.winsok.tw Duty = 0.5 1 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 Single Pulse 1E-4 1E-6 o RqJC :4 C/W 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration (sec) Page 3 Dec.2014 WSD20L50DN P-Ch MOSFET Typical Characteristics Output Characteristics Drain-Source On Resistance 50 60 VGS=-2.5,-3,-4,-5,-6, -7,-8,-9,-10V 30 RDS(ON) - On - Resistance (mW) -ID - Drain Current (A) 40 -2V 20 10 -1.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 30 VGS=-2.5V 20 VGS=-4.5V 10 0 8 16 24 32 -VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 IDS=-11A 40 IDS =-250mA 1.4 Normalized T hreshold Voltage 50 RDS(ON) - On Resistance (mW) VGS=-1.8V 40 0 3.0 60 40 30 20 10 0 50 1.2 1.0 0.8 0.6 0.4 1 2 3 4 5 6 7 8 9 0.2 -50 -25 10 -VGS - Gate - Source Voltage (V) www.winsok.tw 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Page 4 Dec.2014 WSD20L50DN P-Ch MOSFET Typical Characteristics Drain-Source On Resistance 1.8 40 VGS = -4.5V IDS = -11A -IS - Source Current (A) 1.6 Normalized On Resistance Source-Drain Diode Forward 1.4 1.2 1.0 0.8 10 o Tj=150 C o Tj=25 C 1 0.6 o RON@Tj=25 C: 13mW 0.4 -50 -25 0 25 75 0.1 0.0 100 125 150 0.3 10 8 -VGS - Gate - source Voltage (V) 2400 2100 1800 Ciss 1500 1200 900 Crss Coss 300 4 8 12 7 6 5 4 3 2 1 16 0 0 20 10 20 30 40 50 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) www.winsok.tw 1.5 Gate Charge VDS=-10V 9 I =-11A DS 0 1.2 Capacitance 2700 0 0.9 -VSD - Source - Drain Voltage (V) Frequency=1MHz 600 0.6 Tj - Junction Temperature (°C) 3000 C - Capacitance (pF) 50 Page 5 Dec.2014 WSD20L50DN P-Ch MOSFET Typical Characteristics Transfer Characteristics 35 ID - Drain Current (A) 30 25 20 15 o Tj=125 C 10 o Tj=-55 C o Tj=25 C 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-Source Voltage (V) www.winsok.tw Page 6 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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