MM1Z2V2B~MM1Z39B
SILICON PLANAR ZENER DIODES
Features
• Total power dissipation: max. 500 mW
• Small plastic package suitable for
surface mounted design
• High reliability
PINNING
PIN
DESCRIPTION
1
Cathode
2
Anode
2
1
Top View
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Power Dissipation
Junction Temperature
Thermal Resistance Junction to Ambient Air
bl
Page 1 f 3
Ptot
500
mW
Tj
150
O
TStg
- 55 to + 150
O
Symbol
Max.
RthA
340
VF
0.9
C
C
co
ue
Parameter
Forward Voltage
at IF = 10 mA
Unit
lo
Storage Temperature Range
Characteristics at Ta = 25 OC
Value
ur
Symbol
Unit
C/W
O
V
REV01: 09/2011
Characteristics at Ta = 25 OC
Zener Voltage Range 1)
Type
Marking
Code
Vznom
l ZT
V
mA
for
Dynamic Impedance 2)
Reverse Leakage Current
ZZT (Max.)
at I ZT
IR (Max.)
V
Ω
mA
μA
V
VZT
at VR
9B
2.2
5
2.1...2.4
100
5
120
0.7
MM1Z2V4B
9C
2.4
5
2.3…2.65
100
5
120
1
MM1Z2V7B
9D
2.7
5
2.65…2.95
110
5
120
1
MM1Z3V0B
9E
3.0
5
2.95…3.25
120
5
50
1
MM1Z3V3B
9F
3.3
5
3.25…3.55
120
5
20
1
MM1Z3V6B
9H
3.6
5
3.6…3.845
100
5
10
1
MM1Z3V9B
9J
3.9
5
3.89…4.16
100
5
5
1
MM1Z4V3B
9K
4.3
5
4.17…4.43
100
5
5
1
MM1Z4V7B
9M
4.7
5
4.55…4.75
100
5
2
1
MM1Z5V1B
9N
5.1
5
4.98…5.2
80
5
2
1.5
MM1Z5V6B
9P
5.6
5
5.49…5.73
60
5
1
2.5
MM1Z6V2B
9R
6.2
5
6.06…6.33
60
5
1
3
MM1Z6V8B
9X
6.8
5
6.65…6.93
40
5
0.5
3.5
MM1Z7V5B
9Y
7.5
5
7.28…7.6
30
5
0.5
4
MM1Z8V2B
9Z
8.2
5
8.02…8.36
30
5
0.5
5
MM1Z9V1B
0A
9.1
5
8.85…9.23
30
5
0.5
6
MM1Z10B
0B
10
5
9.77…10.21
30
5
0.1
7
MM1Z11B
0C
11
5
10.76…11.22
30
5
0.1
8
MM1Z12B
0D
12
MM1Z13B
0E
13
MM1Z15B
0F
15
MM1Z16B
0H
MM1Z18B
0J
MM1Z20B
0K
MM1Z24B
MM1Z27B
lo
co
11.74…12.24
30
5
0.1
9
12.91…13.49
37
5
0.1
10
5
14.81…15.47
42
5
0.1
11
ue
5
5
16
5
15.85…16.51
50
5
0.1
12
18
5
17.56…18.35
65
5
0.1
13
20
5
19.52…20.39
85
5
0.1
15
bl
MM1Z22B
ur
MM1Z2V2B
0M
22
5
21.54…22.47
100
5
0.1
17
0N
24
5
23.72…24.78
120
5
0.1
19
0P
27
5
26.19…27.53
150
5
0.1
21
MM1Z30B
0R
30
5
29.19…30.69
200
5
0.1
23
MM1Z33B
0X
33
5
32.15…33.79
250
5
0.1
25
MM1Z36B
0Y
36
5
35.07…36.87
300
5
0.1
27
MM1Z39B
0Z
39
5
37…41
100
5
2
30
1)
2)
VZ is tested with pulses(20 ms).
ZZT is measured at IZ by given a very small A.C. current signal.
Page 2 f 3
REV01: 09/2011
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
bl
ue
co
lo
ur
SOD-123
Page 3 f 3
REV01: 09/2011
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