ULN2003N

ULN2003 High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA permit them to drive incandescent lamps. The ULx2003A with a 2.7 kW series input resistor is well suited for systems utilizing a 5.0 V TTL or CMOS Logic. 16 1 SOIC-16 D SUFFIX CASE 751B Features •These are Pb-Free Devices 1/7 ULx2003A 2.7 k Pin 9 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 5.0 k 3.0 k Figure 1. Representative Schematic Diagram (Top View) Figure 2. Pin Connections http://www.hgsemi.com.cn 1 2016 APR ULN2003 MAXIMUM RATINGS (TA = 25°C, and rating apply to any one device in the package, unless otherwise noted.) Rating Symbol Value Unit Output Voltage VO 50 V Input Voltage VI 30 V Collector Current - Continuous IC 500 mA Base Current - Continuous IB 25 mA Operating Ambient Temperature Range ULN2003A ULQ2003A TA Storage Temperature Range Tstg -55 to +150 °C Junction Temperature TJ 150 °C °C -20 to +85 -40 to +85 Thermal Resistance, Junction-to-Ambient Case 751B, D Suffix RqJA Thermal Resistance, Junction-to-Case Case 751B, D Suffix RqJC Electrostatic Discharge Sensitivity (ESD) Human Body Model (HBM) Machine Model (MM) Charged Device Model (CDM) ESD °C/W 100 °C/W 20 V 2000 400 1500 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://www.hgsemi.com.cn 1 2016 APR ULN2003 ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Symbol Characteristic Output Leakage Current (VO = 50 V, TA = +85°C) (VO = 50 V, TA = +25°C) Min Typ Max - - 100 50 - 1.1 0.95 0.85 1.6 1.3 1.1 - 0.93 1.35 - - 2.4 2.7 3.0 Unit mA ICEX Collector-Emitter Saturation Voltage (IC = 350 mA, IB = 500 mA) (IC = 200 mA, IB = 350 mA) (IC = 100 mA, IB = 250 mA) VCE(sat) V Input Current - On Condition (VI = 3.85 V) II(on) Input Voltage - On Condition (VCE = 2.0 V, IC = 200 mA) (VCE = 2.0 V, IC = 250 mA) (VCE = 2.0 V, IC = 300 mA) VI(on) Input Current - Off Condition (IC = 500 mA, TA = 85°C) II(off) 50 100 - mA DC Current Gain (VCE = 2.0 V, IC = 350 mA) hFE 1000 - - - Input Capacitance CI - 15 30 pF Turn-On Delay Time (50% EI to 50% EO) ton - 0.25 1.0 ms Turn-Off Delay Time (50% EI to 50% EO) toff - 0.25 1.0 ms IR - - 50 100 mA VF - 1.5 2.0 V Clamp Diode Leakage Current (VR = 50 V) TA = +25°C TA = +85°C Clamp Diode Forward Voltage (IF = 350 mA) http://www.hgsemi.com.cn 1 mA V 2016 APR ULN2003 TYPICAL PERFORMANCE CURVES - TA = 25°C 400 I O , OUTPUT CURRENT (mA) I O , OUTPUT CURRENT (mA) 400 300 200 100 0 0 1.0 2.0 3.0 4.0 5.0 8.0 9.0 10 11 200 100 0 12 50 0 100 150 200 250 300 350 VI, INPUT VOLTAGE (V) II, INPUT CURRENT (mA) Figure 3. Output Current versus Input Voltage Figure 4. Output Current versus Input Current 800 400 2.5 700 PIN 13 600 I I, INPUT CURRENT (mA) IC , COLLECTOR CURRENT (mA) 300 PIN 10 1 Output Conducting at a Time 500 PIN 16 400 300 200 2.0 Maximum 1.5 Typical 1.0 0.5 100 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 1.0 2.0 3.0 4.0 5.0 6.0 VCE(sat), SATURATION VOLTAGE (V) VI, INPUT VOLTAGE (V) Figure 5. Typical Output Characteristics Figure 6. Input Characteristics 7.0 1 700 2 500 3 300 4 5 200 6 7 100 10 20 30 50 70 NUMBER OF DRIVERS USED I C, COLLECTOR CURRENT (mA) 1000 100 % DUTY CYCLE Figure 7. Maximum Collector Current versus Duty Cycle (and Number of Drivers in Use) http://www.hgsemi.com.cn 1 2016 APR 8.0