AO3415

Plastic-Encapsulate Mosfets AO3415 FEATURES P-Channel MOSFET The AO3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications. D 1.Gate 2.Source SOT-23 3.Drain G S Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Maximum Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V TA=25°C Continuous Drain -4 ID TA=70°C Current Pulsed Drain Current A -3.5 C IDM TA=25°C Power Dissipation B -30 1.5 PD TA=70°C W 1 TJ, TSTG Junction and Storage Temperature Range -55 to 150 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead Symbol Typ Max Units 65 80 °C/W 85 100 °C/W 43 52 °C/W A t ≤ 10s R AD Steady-State Steady-State R GUANGDONG HOTTECH JL INDUSTRIAL CO., LTD Page:P4-P1 Plastic-Encapsulate Mosfets AO3415 Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250 -20 A, VGS=0V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250 -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -30 ±10 uA -0.57 -0.9 V 34 41 49 59 VGS=-2.5V, ID=-4A 42 53 m VGS=-1.8V, ID=-2A 52 65 m VGS=-1.5V, ID=-1A 61 20 VGS=-4.5V, ID=-4A TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-4A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr A -0.64 DYNAMIC PARAMETERS Ciss Input Capacitance Crss uA -5 VDS=0V, VGS= ±8V Coss Units -1 TJ=55°C Gate-Body leakage current Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IGSS RDS(ON) Typ VGS=-4.5V, VDS=-10V, ID=-4A VGS=-4.5V, VDS=-10V, RL=2.5 m m S -1 V -2 A 600 751 905 pF 80 115 150 pF 48 80 115 pF 6 13 20 7.4 9.3 11 nC 0.8 1 1.2 nC 1.3 2.2 3.1 nC , RGEN=3 13 ns 9 ns 19 ns 29 ns Body Diode Reverse Recovery Time IF=-4A, dI/dt=500A/ us 20 26 32 ns Body Diode Reverse Recovery Charge IF=-4A, dI/dt=500A/ us 40 51 62 nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX) =150 C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX) =150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using