SI2305

Plastic-Encapsulate Mosfets FEATURES SI2305 High dense cell design for extremely low RDS(ON) P-Channel MOSFET Rugged and reliable Case Material: Molded Plastic. Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -12 V Gate-source Voltage VGS ±8 V ID -4.1 A IDM -10 A PD 0.35 W Tj, Tstg -55 to +150 °C RθJA 357 °C/W Drain Current (Continuous) Drain Current (Pulsed) a o Total Power Dissipation @TA=25 C Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)b 1.Gate 2.Source SOT-23 3.Drain D G S Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Units Static Drain-source breakdown voltage Gate-source threshold voltage V(BR)DSS VGS = 0V, ID =-250µA -12 VGS(th) VDS =VGS, ID =-250µA -0.5 -0.9 V Gate-source leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =-8V, VGS =0V -1 µA a Drain-source on-state resistance Forward transconductance a RDS(on) gfs VGS =-4.5V, ID =-3.5A 30 45 VGS =-2.5V, ID =-3A 40 60 VGS =-1.8V,ID=-2.0A 60 90 VDS =-5V, ID =-4.1A 6 mΩ S Dynamic Input capacitanceb,c Ciss b,c Output capacitance Coss Reverse transfer capacitanceb,c Crss 740 VDS =-4V,VGS =0V,f =1MHz 190 VDS =-4V,VGS =-4.5V, Total gate charge b Qg b Gate-source charge b Gate-drain charge b,c Gate resistance Qgs Qgd Rg GUANGDONG HOTTECH pF 290 ID =-4.1A VDS =-4V,VGS =-2.5V, INDUSTRIAL CO., LTD 15 4.5 9 nC 14 Ω 1.2 ID =-4.1A f =1MHz 7.8 1.6 1.4 7 Page:P3-P1 Plastic-Encapsulate Mosfets SI2305 Electrical Characteristics (TA=25°C, unless otherwise noted) Turn-on delay timeb,c td(on) b,c tr Rise time b,c Turn-off Delay time td(off) b,c tf Fall time b,c Turn-on delay time VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-4.5V,Rg=1Ω td(on) Rise timeb,c VDD=-4V, tr b,c Turn-off delay time td(off) b,c tf Fall time RL=1.2Ω, ID ≈-3.3A, VGEN=-8V,Rg=1Ω 13 20 35 53 32 48 10 20 5 10 11 17 22 33 16 24 ns Drain-source body diode characteristics Continuous source-drain diode current Pulse diode forward current a Body ciode voltage IS TC=25℃ -1.4 -10 ISM VSD IF=-3.3A -1.2 A V Note : a. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%. b. Guaranteed by design, not subject to production testing. c. These parameters have no way to verify. GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P3-P2 Plastic-Encapsulate Mosfets SI2305 Typical Characteristics Output Characteristics -16 Transfer Characteristics -5 VDS=-3V -4 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) -12 VGS= -4.5V、 -4V、 -3.5V、-3V、-2.5V VGS=-2V -8 VGS=-1.5V -3 -2 Ta=100℃ Ta=25℃ Pulsed Pulsed -4 -1 -0 -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE VDS -0 -0.0 -4 (V) -0.5 -1.0 -1.5 GATE TO SOURCE VOLTAGE VGS -2.0 (V) RDS(ON) —— VGS RDS(ON) —— ID 180 200 Ta=25℃ ON-RESISTANCE RDS(ON) (mΩ) ON-RESISTANCE RDS(ON) (mΩ) Pulsed 120 VGS=-1.8V 60 VGS=-2.5V 150 100 ID=-3.3A Ta=100℃ 50 Pulsed Ta=25℃ VGS=-4.5V 0 -0 -2 -4 -6 -8 DRAIN CURRENT IS —— ID -10 Pulsed 0 -12 (A) -6 VGS (V) -1.0 THRESHOLD VOLTAGE VTH (V) SOURCE CURRENT IS (A) -4 Threshold Voltage VSD Ta=100℃ Pulsed Ta=25℃ Pulsed -0.1 -2 GATE TO SOURCE VOLTAGE -10 -1 -0 -0.4 -0.8 -1.2 SOURCE TO DRAIN VOLTAGE -1.6 VSD (V) GUANGDONG HOTTECH -2.0 -0.8 ID=-250uA -0.6 -0.4 -0.2 -0.0 25 50 75 AMBIENT TEMPERATURE INDUSTRIAL CO., LTD 100 Ta 125 (℃ ) Page:P3-P3