BSS84

BSS84 -60V P-Channel Enhancement Mode MOSFET SOT-23 3 V(BR)DSS ID RDS(on)MAX 8.0Ω@10V -60V 9.9Ω@4.5V 1. Gate 2. Source -170mA 3. Drain 2 1 Features Application ● Trench Power LV MOSFET technology ● Low RDS(ON) ● Low Gate Charge ● Video monitor ● Power management Marking Equivalent Circuit D PD G XXX XXX:Date Code S Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -170 mA Pulsed Drain Current (Note 1) IDM 1.2 A PD 350 mW RθJA 357 ℃/W TJ,Tstg -50 ~150 Power Dissipation(Note 2) Thermal Resistance from Junction to Ambient(Note 2) Junction Temperature and Storage Temperature ℃ Notes: Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1/4 V 1.0 BSS84 -60V P-Channel Enhancement Mode MOSFET Ta = 25℃ unless otherwise specified Symbol Parameter Condition Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -60 -- -- V IDSS Drain-Source Leakage Current VDS=-60V, VGS=0V -- -- -1 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=-250μA -0.9 -1.4 -2.0 V RDS(ON) Drain-Source On-State Resistance(Note 3) VGS=-10V, ID=-150mA -- 3.3 8 Ω VGS=-4.5V, ID=-150mA -- 3.5 9.9 Ω Condition Min Typ Max Unit -- 43 -- pF -- 2.9 -- pF -- 1.8 -- pF Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge VDS=-30V -- 1.77 -- nC Qgs Gate Source Charge VGS=-10V -- 0.57 -- nC Qgd Gate Drain Charge -- 0.18 -- nC Min Typ Max Unit -- 8.6 -- ns -- 20 -- ns -- 15 -- ns -- 77 -- ns Min Typ Max Unit VDS=-30V VGS=0V f=1MHz ID=-150mA Switching Characteristics Symbol Parameter td(on) Turn on Delay Time tr Turn on Rise Time td(off) Turn Off Delay Time tf Turn Off Fall Time Condition VDS=-30V VGS =-4.5V ID=-150mA RG=2.5Ω Source Drain Diode Characteristics Symbol Parameter Condition ISD Source drain current(Body Diode) TA=25℃ -- -- -170 mA VSD Drain-Source Diode Forward Voltage IS=-170mA, VGS=0V -- -- -1.2 V Notes: 1.Pulse width limited by maximum allowable junction temperature 2.The value of PD&RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz.Copper, double sided, in a still air environment with Ta=25℃. 3.Pulse test ; Pulse width≤300us, duty cycle≤2% 2/4 V 1.0 BSS84 -60V P-Channel Enhancement Mode MOSFET ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Drain-Source on Resistance Figure4. Drain-Source on Resistance Figure5. Diode Forward Voltage vs. current Figure6. Gate Threshold vs. Junction Temperature 3/4 V 1.0 BSS84 -60V P-Channel Enhancement Mode MOSFET Outlitne Drawing SOT-23 Package Outline Dimensions A A1 b c D E E1 e L L1 θ L L1 E E1 Symbol e Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 4/4 V 1.0