DMG1012T
Dual N Channel Enhancement Mode MOSFET
0.65A
DESCRIPTION
DMG1012T
N1012 is the N-Channel enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low voltage applications such as
notebook computer power management and other bettery powered circuits where
high-side switching, low in-line power loss, and resistance to transients are needed.
PIN CONFIGURATION
523 / SC89
SOTSOT-523
SC-89
FEATURE
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20V/0.65A, RDS(ON) =380ohm@VGS =4.5V
20V/0.55A, RDS(ON) =450ohm@VGS =2.5V
20V/0.45A, RDS(ON) =800ohm@VGS =1.8V
Super high density cell design for extremely
low RDS(ON)
Exceptional low on-resistance and maximum
DC current capability
SOT-523 / SC89 package design
1/6
DMG1012T
Dual N Channel Enhancement Mode MOSFET
0.65A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
+/-12
V
TA=25℃
Continuous Drain Current (TJ=150℃)
TA=80℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
0.65
ID
1.0
A
IS
0.3
A
PD
Storage Temperature Range
2/6
0.27
W
0.16
TA=70℃
Operation Junction Temperature
A
IDM
TA=25℃
Power Dissipation
0.45
TJ
-55/150
℃
TSTG
-55/150
℃
DMG1012T
Dual N Channel Enhancement Mode MOSFET
0.65A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
V(BR)DSS
VGS=0V,ID=250uA
VGS(th)
VDS=VGS,ID=250uA
Gate Leakage Current
IGSS
Zero Gate Voltage Drain
Current
IDSS
On-State Drain Current
ID(on)
Drain-source On-Resistance
Forward Transconductance
RDS(on)
gfs
Diode Forward Voltage
VSD
DYNAMIC
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Time
Turn-Off Time
Td(on)
tr
Td(off)
tf
20
V
1.0
V
VDS=0V,VGS=+/-12V
100
nA
VDS=20V,VGS=0V
1
VDS=20V,VGS=0V
TJ=55℃
5
VDS≦4.5V,VGS=5V
0.35
uA
0.7
A
VGS=4.5V,ID=0.65A
260
380
VGS=2.5V,ID=0.55A
320
450
VGS=1.8V,ID=0.55A
420
800
VDS=10V,ID=0.4A
1.0
IS=0.15A,VGS=0V
0.8
1.2
1.2
1.5
VDS=10V,VGS=4.5V,VDS=0.6A
mΩ
S
V
nC
0.2
0.3
VDD=10V, RL=10Ω, ID=0.5A,
VGEN=4.5V, RG=6Ω
3/6
5
8
10
1.2
10
15
18
2.8
nS
DMG1012T
Dual N Channel Enhancement Mode MOSFET
0.65A
TYPICAL CHARACTERICTICS
4/6
DMG1012T
Dual N Channel Enhancement Mode MOSFET
0.65A
TYPICAL CHARACTERICTICS
5/6
DMG1012T
Dual N Channel Enhancement Mode MOSFET
0.65A
523 (SC-89
) PACKAGE OUTLINE
SOT
SOT523
SC-89)
6/6
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