PJDLC05

PJDLC05-PJDLC24 Transient Voltage Suppressors for ESD Protection Description YENJI ’s PJDLCxx series are ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from overvoltage caused by electrostatic discharge (ESD), cable discharge events(CDE) and electrical fast transients(EFT).The series has a typical capacitance of only 1pF. This means it can be used on circuits operating in excess of 3GHz without signal attenuation. SOT23 Features ● ● ● ● ● ● ● ● ● ● ● ● IEC61000-4-2 ESD 15KV Air, 8KV contact compliance SOT-23 surface mount package Protects two high speed data line Peak power dissipation of 400W under 8/20μs waveform Working voltage: 5V, 12V, 15V and 24V Low leakage current Ultra low capacitance and clamping voltage Solid-state silicon avalanche technology Lead Free/RoHS compliant Solder reflow temperature: Pure Tin-Sn, 260~270℃ Flammability rating UL 94V-0 Meets MSL level 1, per J-STD-020 Pin Configuration Applications ● ● ● ● HDMI interface protection Mobile display digital interface RF/Antenna circuits USB 2.0 & Firewire ports ● GaAs photodetector protection ● HBT power Amp protection ● Infiniband transceiver protection Maximum Ratings Rating Peak pulse power (tp=8/20μs waveform) ESD voltage (Contact discharge) Symbol Value Unit PPP 400 W VESD ESD voltage (Air discharge) Storage & operating temperature range TSTG ,TJ 1/4 ±8 ±15 -55~+150 kV ℃ PJDLC05-PJDLC24 Transient Voltage Suppressors for ESD Protection O Electrical Characteristics (TJ=25 C ) PJDLC05 Marking T2S Parameter Reverse stand-off voltage Reverse breakdown voltage Symbol Condition Min. Typ. VRWM Max. Unit 5 V VBR I BR=1mA Reverse leakage current IR V R=5V each I/O pin 5 μA Clamping voltage (tp=8/20μs) VC IPP=1A 12 V Off state junction capacitance CJ 0Vdc,f=1MHz Between I/O pins and GND 1 pF Symbol Condition Max. Unit 12 V 6 V PJDLC12 Marking DJ2 Parameter Reverse stand-off voltage Reverse breakdown voltage Min. Typ. VRWM VBR I BR=1mA Reverse leakage current IR VR=12V each I/O pin 1 μA Clamping voltage (tp=8/20μs) VC IPP=1A 25 V Off state junction capacitance CJ 0Vdc,f=1MHz Between I/O pins and GND 1 pF Symbol Condition Max. Unit 15 V 13.3 V PJDLC15 Marking DJ5 Parameter Reverse stand-off voltage Min. VRWM Typ. VBR I BR=1mA Reverse leakage current IR VR=15V each I/O pin 1 μA Clamping voltage (tp=8/20μs) VC IPP=1A 30 V Off state junction capacitance CJ 0Vdc,f=1MHz Between I/O pins and GND 1 pF Reverse breakdown voltage 2/4 16.7 V PJDLC05-PJDLC24 Transient Voltage Suppressors for ESD Protection PJDLC24 Marking DJ4 Parameter Condition Symbol Reverse stand-off voltage Min. Typ. V RWM Max. Unit 24 V V BR IBR=1mA Reverse leakage current IR VR=24V each I/O pin 1 μA Clamping voltage (tp=8/20μs) VC IPP =1A 48 V Off state junction capacitance CJ 0Vdc,f=1MHz Between I/O pins and GND 1 pF Reverse breakdown voltage 26.7 V Typical Characteristics Curves Figure 1. Power Derating Curve Figure 2. Pulse Waveforms 110 100 Peak Power Dissipation (%) 100 90 Peak value Ipp Waveform Parameters: tr=8µs td=20µs 90 80 80 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 tr 0 25 50 75 100 125 150 0 175 TA-Ambient Temperature (℃) td=t|IPP/2 0 5 10 15 20 25 30 t-Time (μs) Figure 4. Forward Voltage vs. Forward Current Forward Voltage (V) Figure 3. Non-Repetitive Peak Pulse vs. Pulse Time 3/4 PJDLC05-PJDLC24 Transient Voltage Suppressors for ESD Protection Dimensions (SOT-23) Dimension Symbol Millimeters Inches Min. Max. Min. Max. A 0.08 0.18 0.003 0.007 B 0.15 - 0.006 - C - 0.13 - 0.005 D 0.89 1.09 0.035 0.043 E 2.80 3.05 0.110 0.120 F 1.90 0.075 G 0.95 0.037 H 1.19 1.40 0.047 0.055 I 2.10 2.49 0.083 0.098 J 0.35 0.50 0.014 0.020 Packaging Tape Reel Symbol Dimension (mm) W 8.00±0.30 P0 4.00±0.10 P1 4.00±0.10 P2 2.00±0.10 D0 Φ1.55±0.10 D1 Φ1.00±0.05 E 1.75±0.10 F 3.50±0.10 A 3.10±0.10 A0 2.10±0.10 B 2.75±0.10 B0 0.65±0.10 K 1.10±0.10 t 0.20±0.05 D Φ178.0±2.0 D2 Φ13.0 W1 9.5 Quantity: 3000PCS 4/4