NZQA6V8AXV5

NZQA6V8AXV5 ESD Protection Array RoHS Device Halogen Free Features - Solid-state silicon-avalanche technology - 30 Watts Peak Pulse Power per Line (tp =8/20μs) - Low operating and clamping voltages - Up to Four (4) Lines of Protection - Working Voltages: 5 V - Low Leakage Current SOT-553 - ESD protection >20 kV - IEC 61000-4-2; level 4 (ESD); 15 kV (air) or 8 kV (contact). 5 4 Mechanical Characteristics - SOT-553 package - Molding compound flammability rating: 1 2 3 UL 94V-0 - Marking: Marking Code - Packaging: Tape and Reel Applications PINNING - Cellular Handsets & Accessories - Personal Digital Assistants (PDAs) - Notebooks & Handhelds - Portable Instrumentation - Digital Cameras - MP3 Player PIN DESCRIPTION 1 2 3 cathode 1 common anode cathode 2 4 5 cathode 3 cathode 4 Absolute Maximum Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs ) PPP 30 Watts Peak Forward Voltage ( IF =1A, t p =8/20μs ) VFP 1.5 V Operating Temperature TJ -55 to + 125 °C TSTG -55 to +150 °C Rating Storage Temperature 1 NZQA6V8AXV5 ESD Protection Array Electrical Parameters (T=25℃) Symbol Parameter I I PP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ I PP VRWM IR VBR IF Working Peak Reverse Voltage VC VBR VRWM Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ I T IT Test Current IF Forward Current VF Forward Voltage @ V I R VF IT I PP IF Electrical Characteristics Parameter Symbol Reverse Stand Off Voltage - Conditions Minimum Typical VRWM Maximum Units 5.0 V 6.0 VBR I T =1mA Reverse Leakage Current IR VRWM=5V,T=25°C 1 μA Peak Pulse Current II P P t p =8/20μs 2 A Clamping Voltage VC IPP= 2A, tp =8/20μs 11 V Junction Capacitance Cj Between I/O pins and Ground VR = 0V, f = 1MHz 6.5 pF Reverse Breakdown Voltage 2 V NZQA6V8AXV5 ESD Protection Array Typical Characteristics Figure 2: Power Derating Curve 10 110 Percent of Rated Power for Ipp Ppp – Peak Pulse Power - Ppp(KW) Figure 1: Peak Pulse Power vs. Pulse Time 1 0.1 0.01 0 .1 1 10 100 100 90 80 70 60 50 40 30 20 10 0 1 ,0 0 0 0 25 td – Pulse Duration - µs 50 75 100 125 150 Ambient Temperature - TA (℃) Figure 3: NZQA6V8AXV5 Insertion Loss Figure 4: Normalized Junction Capacitance vs. Reverse Voltage C H S21 L O G 6 dB / R E F 0 dB 1.1 1.0 F=1MHz Cj(VR)/Cj(VR=0) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 S T A R T .0 3 0 M H z S T O P 3 0 0 0 .0 0 0 0 0 0 M H z 00 1 2 3 Reverse Voltage -VR(V) Figure 5: ESD Clamping( 8kV Contact per IEC 61000-4-2) Tek Run: 2.50GS/s Sample CH1 10.0 VΩ M 30.0ns Ch1 7.0V 3 4 5 NZQA6V8AXV5 ESD Protection Array Outline Drawing –SOT -553 PACKAGE OUTLINE DIMENSIONS SYMBOL D b E1 E 1 e INCHES MILLIMETER MIN MAX MIN MAX A 0.021 0.024 0.525 0.600 b 0.007 0.011 0.170 0.270 C 0.004 0.006 0.090 0.160 D 0.059 0.067 1.500 1.700 E 0.059 0.067 1.500 1.700 E1 0.043 0.051 1.100 1.300 e 0.018 0.022 0.450 0.550 L 0.004 0.012 0.100 0.300 A C L X Notes DIMENSIONS G Z Y P DIM INCHES MILLIMETERS Z 0.0708 1.80 G 0.0354 0.90 P 0.0197 TYP 0.50 TYP X 0.0118 0.3 Y 0.0177 0.45 4 1. Dimensioning and tolerances per ANSI Y14.5M, 1985. 2. Controlling Dimension: Inches 3. Dimensions are exclusive of mold flash and metal burrs.